WMSIC Electronic Components

KUU AO3423

ModelAO3423
PackageSOT-23-3L
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU AO3423
Type
KUU
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
AO3423
Electronic Component
1
Package
SOT-23-3L
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.036g
Electronic Component
1
Electronic Component
BM0264548730
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
325pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO3423 产品概述

一、概述

AO3423 是一款面向便携设备和电源管理场景的 P 沟道 TrenchFET 功率 MOSFET,品牌为 KUU,封装为 SOT-23-3L。器件设计用于低压高侧开关和 DC/DC 转换器旁路/回路控制,结合小封装与合理的导通电阻,适合尺寸受限的移动和便携式系统。

二、主要参数

  • 类型:P 沟道功率 MOSFET(单片)
  • 漏源电压 Vdss:20 V
  • 连续漏极电流 Id:2 A
  • 导通电阻 RDS(on):150 mΩ @ Vgs = -2.5 V
  • 阈值电压 Vgs(th):≈ 1 V(典型)
  • 总栅极电荷 Qg:120 nC @ 4.5 V
  • 输入电容 Ciss:325 pF;反向传输电容 Crss:37 pF
  • 功耗 Pd:1.4 W(芯片/封装极限)
  • ESD 保护:2.0 kV
  • 封装:SOT-23-3L

三、特性与优势

  • TrenchFET 结构提供较低导通电阻与良好单片一致性,适合低压电源路径。
  • SOT-23 小体积,便于高密度 PCB 布局和便携产品集成。
  • 阈值电压低,便于在接近地电位的控制信号下实现可靠开关。
  • ESD 抗扰能力(2 kV)提高外部接口和装配过程的可靠性。

四、典型应用

  • 便携式设备的正高侧负载开关(开/关电源给子系统)。
  • DC/DC 转换器中用于同步整流或回路保护的高侧开关。
  • 电池管理与电源路径控制、低功耗待机切换。

五、选型与使用建议

  • 若工作电流接近 2 A 或频繁大电流脉冲,应关注封装散热与板上温升,必要时选用更低 RDS(on) 或更大封装。
  • 栅极电荷 Qg = 120 nC 较大,驱动时需评估驱动器能否提供足够电流,否则开关速度受限且产生额外损耗。
  • 在作为高侧开关时,请注意 P 沟道栅极相对于源极的驱动电压幅度,保证在关断/导通状态有足够的 Vgs。

六、封装与散热

SOT-23-3L 小封装限制了功耗散发,Pd 约 1.4 W(理想环境)。实际使用中建议:

  • 增加铜箔面积(散热焊盘)和多层热通孔以降低结温;
  • 在高环境温度或连续大电流工况下按热阻和结温限制降额使用。

七、注意事项

  • 评估 Crss 对于开关回跳和电磁干扰的影响,必要时增加栅极电阻或吸收器件。
  • 在 PCB 布局中短化漏—源回路路径,靠近电感和负载布置以减少寄生感抗。
  • 若需更低导通损耗或更高电流能力,可考虑同类更低 RDS(on) 或更大封装的器件替代。

综上,AO3423 在小体积、高密度便携设备中作为 P 沟道高侧开关或 DC/DC 辅助开关具备良好平衡的电气特性与成本效益。

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