WMSIC Electronic Components

KUU IRLML2502TRPBF

ModelIRLML2502TRPBF
PackageSOT-23
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU IRLML2502TRPBF
Type
KUU
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
IRLML2502TRPBF
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0264873500
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRLML2502TRPBF 产品概述

一、主要参数与特性

IRLML2502TRPBF 是一款小封装、低压、逻辑电平驱动的 N 沟道场效应管,适合便携与功率管理场合。主要参数如下:

  • 数量:1 个 N 沟道
  • 漏源电压 Vdss:20 V
  • 连续漏极电流 Id:6 A
  • 导通电阻 RDS(on):25 mΩ @ VGS = 4.5 V
  • 耗散功率 Pd:1.25 W(封装与环境依赖)
  • 阈值电压 VGS(th):约 1 V
  • 栅极电荷 Qg:10 nC @ 4.5 V
  • 输入电容 Ciss:574 pF;反向传输电容 Crss:60 pF
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23
  • 品牌:KUU

二、性能解读

该器件为典型的逻辑电平 MOSFET:在 4.5 V 门极驱动下即可达到 25 mΩ 的低导通电阻,适合与 MCU 或 5 V 驱动直接接口。较低的 Qg(10 nC)和中等 Ciss 表明在中高频切换(例如 DC-DC 开关)中驱动能耗和开关损耗处于可控范围。20 V 的耐压适用于单节电池或 12 V 较低电压系统。需注意 SOT-23 封装的热阻较大,额定耗散功率 1.25 W 在无强制散热条件下需考虑功率与温升的匹配与降额。

三、典型应用

  • 便携设备的电源开关与负载开关(低压、低损耗场合)
  • 电池管理与电源路径切换(单节锂电、USB 电源等)
  • 低压 DC-DC 转换器的同步整流或开关元件(小功率)
  • 驱动小型电机、继电器或指示负载(受限于功耗与散热)

四、PCB 与散热建议

  • SOT-23 封装散热有限,建议在 PCB 上使用较大铜箔面积连接源脚和漏脚,并尽量增加散热层和过孔以引导热量到大面积铜箔。
  • 布局上门极走线应尽量短,靠近驱动源放置门极电阻(10〜100 Ω)抑制振荡;源端应为测量基准,布线粗短以减小寄生电感。
  • 对于开关频率较高的应用,建议在门极到驱动端并联小阻尼和必要的 RC 滤波以控制上升下降沿,减小 EMI。
  • 若在高环境温度或连续大电流工况下使用,应按规格书进行温升与功耗计算并考虑降额使用。

五、选型与注意事项

  • 确认系统工作电压与最大 Vdss(20 V)匹配,避免超压。
  • 在需要大电流或持续功耗时优先评估热管理方案,必要时选择更大封装或并联器件。
  • 驱动电压建议以 4.5 V 为基准评估 RDS(on),低于该电压时导通阻抗会上升,影响热耗与效率。
  • 在高速切换或感性负载场合加装适当的吸收元件(TVS、二极管或RC)以保护器件免受尖峰电压冲击。

总结:IRLML2502TRPBF 以低导通电阻、逻辑电平驱动和小封装为主要优势,适用于空间受限且要求低压高效开关的应用场景。选型时重点关注散热条件与实际门极驱动电压,确保在安全工作区内运行。

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