WMSIC Electronic Components

LGE BC546B

ModelBC546B
PackageTO-92-3
BrandLGE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LGE BC546B
Type
LGE
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LGE
Electronic Component
BC546B
Electronic Component
1
Package
TO-92-3
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.197g
Electronic Component
1
Electronic Component
BM0228289757
Transistor Type
NPN
Frequency(f T)
150MHz
Power Dissipation(Pd)
625mW
Electronic Component
Electronic Component
Electronic Component
2000
Collector Current(Ic)
100mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC546B 产品概述

BC546B(LGE/鲁光,TO-92-3)是一款通用 NPN 双极晶体管,面向低噪声小信号放大与通用开关场合。该器件在小封装下提供了较高的击穿电压与合理的功耗能力,适合音频前级、传感器接口、低电流驱动及一般放大电路使用。

一、主要参数概览

  • 晶体管类型:NPN(BJT)
  • 集电极电流(Ic,最大):100 mA
  • 集射极击穿电压(Vceo,最大):65 V
  • 耗散功率(Pd,最大):625 mW(TO-92 封装,通常为环境温度 25°C 条件下额定值,实际使用需按温度降额)
  • 直流电流增益(hFE):约 200(典型值,测量条件为 Ic ≈ 2 mA、VCE = 5 V)
  • 特征频率(fT):150 MHz(表征高频放大能力)
  • 集电极截止电流(Icbo,典型/最大):100 nA(表征反向泄漏)
  • 集射极饱和电压(VCE(sat),典型):约 300 mV(在特定驱动条件下)
  • 射基极击穿电压(Vebo,最大):6 V
  • 封装:TO-92-3
  • 品牌:LGE(鲁光)

二、特性与优势

  • 高击穿电压(65 V)使得 BC546B 在中等电压应用中更可靠,可用于常见的 12 V、24 V 系统的信号级或驱动级。
  • hFE 在小电流工作点(Ic ≈ 2 mA)下约 200,利于低噪声放大器与电流放大场合,配合较低的 Icbo 可以实现较低的漏电噪声。
  • fT = 150 MHz 表明在高频小信号放大上有一定余量,适合音频、射频前端或高速开关边缘处理(需注意器件极限)。
  • TO-92 小封装便于手工焊接和面向快速原型设计与小批量生产。

三、典型应用场景

  • 音频前置放大器与低噪声放大器(低电流工作点时表现良好)。
  • 传感器信号放大与接口(例如光电、温度传感器等弱信号放大)。
  • 逻辑电平低电流开关、驱动小继电器或驱动后级功率晶体管/场效应管的基极/栅极。
  • 通用放大与缓冲电路、低功耗偏置网络。

四、电路使用与注意事项

  • 功率与温度:标称 Pd = 625 mW 为在指定环境温度下的最大耗散,实际电路中需按功率降额规则和封装热阻对耗散能力进行计算并限制 Ic、VCE 以避免过热。长时间在高功率点工作需加装散热措施或选择更大封装器件。
  • 工作区限制:Ic 的 100 mA 为峰值或绝对最大值,不能长期以该值工作;同样 Vceo = 65 V 与 Vebo = 6 V 为极限参数,超过会导致器件击穿损坏。
  • 饱和与驱动:VCE(sat) ≈ 300 mV 为典型值,实际大小与基极驱动电流相关。设计时确保基极有足够电流以进入所需饱和或放大区,但也要防止基极过流。
  • 漏电与偏置:Icbo 在纳安级,适合低漏电要求的电路,但在高温下漏电会增加,应在热稳定性设计中考虑。

五、封装与引脚说明

  • 封装:TO-92-3,体积小、易于手工焊接与插装。常见处理方法是面向扁平面时左-中-右三脚排列(不同厂家可能略有差异),建议在实际设计前查阅所购买器件的详细数据手册以确认引脚序列与方向。

六、选型建议与替代

  • 如需更高功耗或更大电流,应选用更大封装(例如 SOT-223、TO-220 等)或功率型晶体管。
  • 若主要关注低噪声放大,可对比同系列的低噪声元件或更高 hFE 的型号;若需要更高频率性能,可考虑 fT 更高的射频小信号晶体管。
  • 对长期可靠性有要求的设计,应参考器件的完整电气、热及机械规格书,并进行环境和寿命评估。

如需该器件的完整电气特性曲线、典型测试条件或具体引脚排列图,建议查阅 LGE(鲁光)提供的原厂数据手册或向供应商索取样片进行实际测量验证。

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