WMSIC Electronic Components

LGE 3SMB5919B

Model3SMB5919B
PackageSMB
BrandLGE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LGE 3SMB5919B
Type
LGE
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LGE
Electronic Component
3SMB5919B
Electronic Component
1
Package
SMB
Electronic Component
Zener Diode
Electronic Component
0.132g
Electronic Component
1
(Zzk)
250Ω
(Zzt)
2Ω
Electronic Component
BM0230873941
Diode
1
Current(Ir)
5uA
Power Dissipation(Pd)
3W
Electronic Component
5.32V~5.88V
Electronic Component
55℃~+150℃

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

3SMB5919B 产品概述

一、产品简介

3SMB5919B 是鲁光(LGE)出品的一款独立式稳压二极管(齐纳二极管),封装为 SMB,适用于中小功率的稳压与箝位场合。该器件以标称稳压 5.6V 为设计目标,结合 SMB 封装的热特性与 3W 的最大耗散能力,适合 PCB 平台上的稳压基准、浪涌/过压保护及稳压箝位应用。

二、主要技术参数

  • 稳压值(标称):5.6V
  • 稳压值范围:5.32V ~ 5.88V
  • 最大耗散功率 Pd:3W(在规定的散热条件下)
  • 反向电流 Ir:5 μA(典型,取决于测试电压)
  • 阻抗 Zzk:250 Ω(在某一低电流或拐点条件下规格化参数)
  • 阻抗 Zzt:2 Ω(在额定测试电流点的动态阻抗,表征稳压能力)
  • 工作结温范围:-55 ℃ ~ +150 ℃
  • 封装:SMB(中功率表面贴或通孔座封装形式)

三、性能特点与设计意义

  • 稳定电压精度:标称 5.6V,并给出 5.32–5.88V 的范围,适合对输出电压有中等精度要求的场合。
  • 动态阻抗低(Zzt = 2 Ω):在额定测试电流附近,电压随电流变化小,有利于作为基准或局部稳压源。
  • 低漏电(Ir = 5 μA):在低电流待机或断电状态下引入的误差小,适合微功耗电路的保护用途。
  • 中等功率能力(Pd = 3W):可直接吸收一定幅值的瞬态能量,但长期热管理需注意结温与 PCB 散热。

四、典型应用场景

  • 作为基准稳压器件用于小功率线性稳压或电源参考。
  • 浪涌与过压保护(如数据线、电源输入端的箝位)。
  • 电平转换或电路防反接保护中的稳压元件。
  • 仪表与传感器电路中做稳压参考或限压元件。

五、封装与热管理

SMB 封装兼顾安装方便与一定的散热能力。3W 的耗散能力是在标准条件下的额定值,实际电流与功耗设计需以结温限制为准。设计时建议:

  • 采用足够的铜面积与热过孔改善 PCB 散热。
  • 计算最高允许电流:理论 Iz_max = Pd / Vz(例如 3W / 5.6V ≈ 0.536A),但此为热学上的极限值,实际工作电流应远低于此值并考虑降额与脉冲持续比(DUTY)。
  • 在高环境温度或封装散热受限时进行功率降额,保留结温裕量。

六、选型与使用建议

  • 若要求稳压精度高,应选在器件给定的测试电流附近工作,以利用 Zzt 所示的低动态阻抗特性;避免长期工作在拐点区(对应较大 Zzk),以免电压漂移增大。
  • 设计串联限流电阻时,按 Vr = Vin - Vz,Iz = Vr / R 的方法确定电流,并计算功耗及热升,以保证 Pd 与结温限制不被突破。
  • 注意过流与过温保护:在可能出现大电流浪涌的场合加入限流或熔断保护元件。
  • 参照鲁光(LGE)官方数据手册获取详细测试条件(测试电流、温度系数、典型 VI 曲线等),并在样片验证中确认在目标电路与 PCB 布局下的实际表现。

总结:3SMB5919B 以其 5.6V 稳压值、低动态阻抗与 SMB 封装的中等功率能力,适合多种需局部稳压或过压箝位的应用。关键在于合理的热设计与工作点选择,以发挥其稳压与保护性能。

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