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LGE BYG21M
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE BYG21M
- Type
- LGE
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- BYG21M
- Electronic Component
- 1
- Package
- DO-214AC(SMA)
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.09g
- Electronic Component
- 1
- Electronic Component
- BM0228289873
- Current
- 1.5A
- Diode
- 1
- Current(Ir)
- 1uA@1kV
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BYG21M 产品概述
一、产品简介
BYG21M 是鲁光（LGE）推出的一款独立式快恢复整流二极管，封装为 DO-214AC（SMA），面向中高压、高效率整流与回流防护应用。器件额定直流整流电流为 1.5A，直流反向耐压高达 1kV，反向电流仅 1µA（@1kV），结合 120ns 的反向恢复时间和 1.6V 的正向压降，使其在保证高压耐受的同时具有较好的开关性能与低损耗特性。
二、主要电气参数
- 工作结温范围：-55℃ ~ +150℃（Tj）
- 正向压降：Vf = 1.6V @ If = 1.5A
- 平均整流电流：IF(AV) = 1.5A
- 非重复峰值浪涌电流：Ifsm = 30A
- 直流反向耐压：Vr = 1kV
- 反向泄漏电流：Ir = 1µA @ Vr = 1kV
- 反向恢复时间：Trr = 120ns
- 封装：DO-214AC（SMA），独立式器件易于更换与散热处理
三、产品特性与优势
- 高耐压：1kV 反向耐压使其适合高压整流与电源前端保护；
- 低泄漏：在 1kV 下仅 1µA 的反向电流，适用于高阻抗或待机功耗敏感场景；
- 快恢复：120ns 的 Trr 相比普通整流器件具备更小的开关损耗与较低的反向恢复尖峰，提升开关转换效率；
- 抗冲击能力：30A 的非重复浪涌电流能承受启动或故障时的瞬态冲击；
- 封装便捷：SMA 封装易于表贴生产与手工维修，同时便于在 PCB 上布置散热通道。
四、典型应用场景
- 开关电源（SMPS）高压整流与回收电路；
- 逆变器及电机驱动的自由轮回路；
- 高压电源与医用电源的整流与保护；
- 通信基站、高压适配器与工业电源的二级整流或阻尼回路；
- 含高 dv/dt 场合的吸收/钳位电路（建议配合吸收网络使用以抑制恢复尖峰）。
五、使用建议与散热注意
- 在 1.5A 连续工作时需考虑封装与 PCB 的散热设计，建议使用短回流路径及加宽铜箔/过孔提高热传导；
- 对于高频或高 dV/dt 工作环境，尽管 Trr 为 120ns 已属快恢复类，仍建议在必要时并联 RC 吸收或缓冲网络以降低电磁干扰与恢复尖峰；
- 安装与焊接按照 SMA 封装常规工艺进行，注意回流温度曲线与焊点可靠性，避免长期超过器件额定结温上限；
- 在高压条件下布板应保持足够的爬电距离与绝缘措施，防止表面闪络。
BYG21M 以其高耐压、低泄漏和较快恢复性能，适用于需要兼顾高压耐受与开关效率的电源和保护类应用。若需完整的详细参数与封装尺寸，请参照制造商完整数据手册或联系鲁光技术支持获取样片与可靠性报告。
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