WMSIC Electronic Components

LGE RS2M

ModelRS2M
PackageSMB
BrandLGE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LGE RS2M
Type
LGE
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LGE
Electronic Component
RS2M
Electronic Component
1
Package
SMB
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.182g
Electronic Component
1
Electronic Component
BM0228289464
Current
2A
Diode
1
Current(Ir)
5uA@1kV
(Vf)
1.3V@2A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RS2M 产品概述

RS2M 是鲁光(LGE)推出的一款高电压、快恢复整流二极管,采用 SMB 表面贴装封装,面向需要高耐压、高效率且抗浪涌能力较强的中功率整流与保护场合。器件以 1kV 级别的反向耐压、2A 的持续整流能力和较低的正向压降为主要特性,结合 500ns 的反向恢复时间,适用于开关电源、工业电源以及电机驱动等对效率与可靠性有要求的应用。

一、主要特性

  • 品牌与型号:LGE (鲁光) RS2M(独立式二极管)
  • 封装:SMB(表面贴装,便于自动化贴装与回流焊接)
  • 工作结温范围:-55℃ ~ +150℃(Tj)
  • 最大直流整流电流:2A
  • 正向压降(Vf):1.3V @ IF = 2A
  • 非重复峰值浪涌电流(Ifsm):50A(单次浪涌能力)
  • 直流反向耐压(Vr):1000V
  • 反向电流(Ir):5μA @ Vr = 1kV
  • 反向恢复时间(Trr):500ns(快恢复型,适合中低频开关应用)

二、性能亮点与优势

  • 高耐压设计:1kV 的反向耐压使 RS2M 能够在高压整流与隔离电源输出二次侧整流、工业电源输入整流等场合可靠工作。
  • 低正向压降:在 2A 工作点 Vf 约为 1.3V,可有效降低整流损耗,提升系统效率,尤其在连续整流或高占空比场合更为明显。
  • 快恢复特性:Trr 约为 500ns,为开关频率不太高的开关电源、变频器辅助回路提供较好的开关损耗与电压应力平衡。
  • 良好浪涌承受力:Ifsm = 50A(非重复峰值),能承受开机浪涌、电容充放电或故障瞬态等带来的短时大电流冲击。
  • SMB 封装:适合自动化贴装、方便大批量生产,同时具备较好的热扩散面,便于在 PCB 上通过加大铜箔改善散热。

三、典型应用场景

  • 开关电源(SMPS)二次侧整流(中小功率)
  • 工业电源与高压整流模块
  • 逆变器与电机驱动回路的续流/钳位二极管
  • 电池充电器与适配器(高压路径的整流)
  • 浪涌抑制与保护电路、极性保护
  • 中等频率的功率整流与吸收回路

四、使用与电路设计建议

  • 散热管理:在连续 2A 工作时,器件正向功耗约为 P ≈ Vf × IF ≈ 1.3V × 2A = 2.6W。实际结温受 PCB 铜面积、热沉与环境温度影响显著,建议在 PCB 上为 SMB 封装提供充足的散热铜箔和多层热通孔以降低结温。必要时并行多个器件或外加散热措施。
  • 反向恢复影响:Trr = 500ns 表明在较高开关频率时反向恢复电流会引起额外的损耗与电磁干扰(EMI)。在高频密集开关场合,应考虑并联 RC 缓冲、吸收网络或采用软恢复/肖特基器件来降低开关损耗与尖峰。
  • 浪涌保护:Ifsm = 50A 为非重复峰值,建议在设计中考虑浪涌限流与适当的保险保护,避免器件在重复或持续超额冲击下失效。
  • 布局建议:走线尽量短、宽,减少寄生电感。二极管与相关开关器件(如 MOSFET)之间应尽量紧凑布局,输入/输出旁路电容靠近器件焊盘,以控制回流环路并降低 EMI。
  • 可靠性注意:在高电压下运行时,注意绝缘爬电距离与 PCB 上的间隙、爬电距离设计,确保符合系统安全规范。

五、封装与装配

  • SMB 表面贴装封装,适合自动贴片与回流焊接。推荐按照常规无铅(或有铅)回流曲线进行焊接,严格控制回流温度与时长以保证可靠焊点与器件性能稳定。
  • 由于器件工作结温可达 150℃,在高温工况或闭塞环境下应通过设计热流道或外部散热来降低结温,以延长寿命并保证工作在额定参数内。

六、质量与选型提示

  • RS2M 适用于需要 1kV 反向耐压与中等整流电流(2A)的应用。选型时应结合工作频率、浪涌情况与系统散热能力进行评估。
  • 若系统对开关损耗与反向恢复带来的 EMI 有更严格要求,可考虑更低 Trr 或肖特基系列;若需更高整流电流或更强浪涌能力,可参考更高电流或更大封装的器件。

总结来说,RS2M(LGE 鲁光)是一款面向中等功率、高压应用的快恢复整流二极管,具有 1kV 耐压、2A 连续整流、50A 瞬态浪涌能力及 1.3V@2A 的低正向压降。合理的散热设计和对反向恢复特性的考量,可以使其在开关电源、工业电源、驱动与保护电路中表现稳定可靠。

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