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LGE BZV55C3V3
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE BZV55C3V3
- Type
- LGE
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- BZV55C3V3
- Electronic Component
- 1
- Package
- SOD-80
- Electronic Component
- Zener Diode
- Electronic Component
- 0.046g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 85Ω
- Electronic Component
- BM0228289452
- Diode
- 1
- Current(Ir)
- 2uA
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 3.1V~3.5V
- Electronic Component
- 65℃~+200℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZV55C3V3 产品概述
一、产品简介
BZV55C3V3 是鲁光（LGE）出品的独立式稳压二极管，标称稳压值 3.3V（允许范围 3.1V~3.5V），用于低功耗电压基准和浪涌吸收场合。器件封装为 SOD-80，适合表面贴装工艺。
二、主要特性
- 稳压值（标称）：3.3V（范围 3.1V ~ 3.5V）
- 最大耗散功率 Pd：500 mW（环境与散热条件相关需降额）
- 反向漏电流 Ir：2 μA @ 1V
- 稳压阻抗：Zzt = 85 Ω；Zzk = 600 Ω（代表稳压区与拐点处的阻抗特性）
- 工作结温范围：-65 ℃ ~ +200 ℃
- 封装：SOD-80（小型表面贴装）
- 应用：低功耗基准、信号钳位、浪涌吸收、偏置电路
三、电气特性说明
Zzt（测试稳态阻抗）较低表明在规定工作电流下输出电压随电流变化不大；Zzk（拐点阻抗）较高表示在接近击穿起始区电压波动较敏感。Ir 给出器件在低电压下的泄漏水平，适合要求低静态电流的电路。
四、热与环境特性
额定耗散 500 mW 是在特定散热条件下的最大值。实际应用中需根据电路布局和PCB散热能力进行降额，避免长期接近极限功耗。器件宽工作结温（-65 ℃ ~ +200 ℃）适用于高温或工业级应用场合，但高温下漏电流与稳压特性会有变化，应在设计时考虑温度影响。
五、封装与可靠性
SOD-80 封装体积小、适合自动贴装与回流焊工艺。常规可靠性试验（温度循环、储存寿命、焊接耐受性）应满足应用要求。对焊接热应力、溢流电流及静电敏感度等应按生产工艺控制。
六、典型应用场景
- 电源参考与局部稳压（小电流）
- 输入钳位与过压保护
- 模拟电路偏置、传感器前端参考
- 电池供电与便携设备的低功耗电压基准
七、设计与使用建议
采用串联限流电阻与稳压二极管并联到地的经典方案：R = (Vin − Vz) / Iz。举例（仅供参考）：若 Vin = 5V，Vz ≈ 3.3V，取 Iz = 5 mA，则 R ≈ 340 Ω，稳压二极管功耗约 3.3V × 5 mA = 16.5 mW，远低于最大耗散 500 mW。选取 Iz 时兼顾稳压精度与功耗；在浪涌或短路情况下应保证限流电阻与器件功耗限值不会被超越。
八、质量与测试建议
在量产前建议参考完整数据手册进行 IZT、IZK、温度系数、瞬态响应与极限参数测试。对关键应用可做老化与环境应力测试，验证在高温、低温及脉冲条件下的稳定性与寿命。
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