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LGE MMBT5551
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE MMBT5551
- Type
- LGE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- MMBT5551
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0230873935
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT5551 产品概述
一、产品简介
MMBT5551 是一款高压 NPN 小信号晶体管，由 LGE（鲁光）生产，采用 SOT-23 细小封装，适合在空间受限的电路板上实现高压开关与放大功能。器件在高电压条件下仍能保持稳定工作，适合通信、工业控制与功率管理等领域。
二、主要参数
- 晶体管类型：NPN
- 集电极电流 (Ic)：600 mA
- 集射极击穿电压 (Vceo)：160 V
- 耗散功率 (Pd)：350 mW（封装限制，按环境温度降额）
- 直流电流增益 (hFE)：100 @ Ic=10 mA, Vce=5 V
- 特征频率 (fT)：100 MHz
- 集电极截止电流 (Icbo)：50 nA
- 集电极-射极饱和电压 (VCE(sat))：200 mV（典型）
- 射基极击穿电压 (Vebo)：6 V
- 工作结温范围：-55 ℃ ~ +150 ℃（Tj）
- 封装：SOT-23
三、特点与优势
- 高压承受能力：Vceo 达 160 V，适合高压信号的开关与电平转换。
- 小封装高集成度：SOT-23 适用于表面贴装，利于小型化设计。
- 较高增益与频率响应：hFE≈100（低电流区），fT≈100 MHz，适合中高频放大应用。
- 低饱和压降：VCE(sat) 典型值 200 mV，有利于降低开关损耗。
- 低漏电流：Icbo 仅 50 nA，提高静态性能与待机功耗表现。
四、典型应用场景
- 高压开关与电平转换电路
- 中频信号放大（前置放大、驱动级）
- 通信设备中的驱动与开关元件
- 工业控制、传感器接口及一般用途信号处理
五、使用注意与热管理
- Pd=350 mW 为封装功耗极限，实际应用需根据环境温度与 PCB 散热能力降额使用。连续大电流（接近 Ic 上限）下容易超出耗散能力，应采用限流、脉冲工作或加大铜箔散热。
- 基极驱动要加限流电阻，防止基极过流或 Vebo 被击穿（6 V 限制）。
- 在高频应用注意寄生电容与布局，缩短走线减小寄生电感以保持稳定性。
- 建议在 PCB 布局时为 SOT-23 提供足够的散热铜箔并避免热源集中。
六、封装与订购信息
- 品牌：LGE（鲁光）
- 封装：SOT-23，便于 SMT 贴装与自动化生产
- 产品描述示例：三极管 (BJT) 350 mW 160 V 600 mA NPN（MMBT5551）
以上为 MMBT5551 的核心参数与应用建议。根据实际电路工况（电流、频率、占空比与环境温度）对器件进行选型与热设计，以保证长期可靠运行。
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