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LGE S8050
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LGE S8050
- Type
- LGE
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LGE
- Electronic Component
- S8050
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0226478482
- Transistor Type
- NPN
- Frequency(f T)
- 150MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 500mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S8050 产品概述
一、产品简介
S8050 是一款通用 NPN 小信号晶体管，由 LGE（鲁光）生产，采用 SOT-23 小体积封装，适用于中低功率开关和放大场合。器件在典型工作点下具有较高直流电流增益和良好的频率特性，适合便携设备、信号处理与驱动电路。
二、主要参数
- 晶体管类型：NPN
- 直流电流增益 hFE：250 @ Ic=50mA, VCE=1V
- 集电极电流 Ic（最大）：500mA
- 集电极-发射极击穿电压 Vceo：25V
- 发射极-基极击穿电压 Vebo：5V
- 集电极截止电流 Icbo：100nA（典型）
- 集电极电流对应耗散功率 Pd：625mW（封装限制）
- 特征频率 fT：150MHz
- 集射极饱和电压 VCE(sat)：600mV（在指定电流与基驱动下）
三、主要特点
- 高直流增益：在中等电流区（~50mA）hFE 可达 250，有利于放大器级的电压/电流增益设计。
- 宽频带性能：fT≈150MHz，能够胜任高频小信号放大及邻近射频应用中的前级放大。
- 小封装、大功率密度：SOT-23 体积小、便于表面贴装，Pd=625mW 需合理散热设计。
- 兼顾开关与线性：饱和电压较低（约600mV），适合低压开关和驱动应用，同时线性区表现良好。
四、典型应用
- 低功耗便携设备的信号放大与电平转换。
- 小型开关电路、继电器/小电流继电器驱动（注意功率及饱和压）。
- 多级放大器的前置级与电流放大场合。
- 模拟电路中的电流源、缓冲器与电压跟随器等。
五、封装与引脚
- 封装：SOT-23（3 引脚）
- 引脚功能：常见引脚排列为 1-基极(B)、2-发射极(E)、3-集电极(C)（具体请参照厂方数据手册）。SOT-23 尺寸紧凑，焊接时应注意回流曲线与焊盘设计。
六、使用建议与注意事项
- 热管理：Pd=625mW 在 SOT-23 中属中等水平，须评估 PCB 铜箔面积和散热路径以避免过热。
- 驱动与饱和：为了减小 VCE(sat)，应保证基极有足够驱动电流（一般 Ib≈Ic/10 作为参考），但同时注意基极功耗。
- 极限条件：不超过 Vceo=25V 与 Ic 最大 500mA，频繁接近极限会降低可靠性。
- 器件配对：若用于差分或多路一致性电路，建议按批次筛选 hFE 或做局部配对。
七、选型参考
需要更高功率或更低饱和压时可考虑封装更大或功率更高的替代型号；若工作频率接近或高于几十 MHz，应关注器件在目标频段的增益与相位特性。最终选型应参考鲁光官方数据手册中的详尽电气特性曲线与荐用焊接规范。
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