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muRata GCJ188R72A104KA01D
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- mu Rata GCJ188R72A104KA01D
- Type
- MURATA
- Unit
- Electronic Component
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- MURATA
- Electronic Component
- GCJ188R72A104KA01D
- Electronic Component
- 1
- Electronic Component
- 100nF
- Package
- 0603
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.034g
- Electronic Component
- 1
- Electronic Component
- BM0227626665
- Electronic Component
- X7R
- Voltage
- 100V
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GCJ188R72A104KA01D 产品概述
一、产品基本信息与主要特性
GCJ188R72A104KA01D（品牌：muRata / 村田）为贴片多层陶瓷电容（MLCC），主要参数如下：容值 100 nF（0.1 µF）、公差 ±10%、额定电压 100 V、温度特性 X7R、封装 0603（常见尺寸对应约 1.6 × 0.8 mm）。此类器件适用于对体积、耐压及可靠性有要求的中高电压电路中作为旁路、去耦或滤波元件。
二、X7R 介质与温度、电压行为
X7R 属于 Class II 陶瓷介质，其温度特性满足 −55 ℃ 到 +125 ℃ 范围内容量变化在 ±15% 以内（材料特性）。注意：在实际电路中，尤其是小体积高电压规格（0603，100 V）时，电容在施加直流偏置时会发生显著的容量下降（DC bias effect），以及随频率变化的响应。设计时应参考厂商的容量-电压曲线与频率特性，避免仅以标称值评估滤波/去耦性能。
三、典型应用场景
- 高电压轨的旁路与去耦（工业电源、传感器供电、汽车电子若满足车规）
- EMI 滤波与电源滤除高频噪声
- 与其他电容并联作为体积受限处的补偿电容
不建议在要求高精准电容值或电容随温度/电压变化极其受控的时序/频率网络中替代 C0G/NP0 类电容。
四、选型与使用建议
- 评估 DC bias：在目标工作电压下测量或参考厂商曲线，确认剩余有效容量满足设计需求。
- 考虑温度与容差叠加：器件标称 ±10% 为室温值，结合 X7R 温漂，实际容量波动需纳入容差预算。
- PCB 布局：靠近 IC 电源引脚放置以降低寄生阻抗，走线短且宽，减小 ESL/ESR 影响。
- 机械应力与焊接：避免在贴片中心施加弯曲或应力，遵循厂商推荐的回流焊工艺（温度曲线与预热/冷却速率）。
- 考虑并联：如需更稳定或更低 ESR/ESL 的解决方案，可并联多个电容以优化频响与容值稳定性。
五、可靠性、包装与采购注意
村田为知名供货商，一般产品会经过常规的可靠性测试（高温、高湿、回流耐受等），并提供卷带（Tape & Reel）包装以便 SMT 自动化安装。采购时确认料号无误（部分料号前缀/字符可能因生产批次或命名规则略有差异），并索取最新数据表与容量-电压、频率特性曲线以便设计验证。
六、总结
GCJ188R72A104KA01D 是一颗在 0603 小封装下实现 100 V 耐压的 X7R 贴片电容，适合空间受限且需要较高耐压的去耦与滤波场合。设计时重点检查直流偏置下的实际有效容量与温漂影响，合理布局并遵循厂商焊接与储存建议，能获得稳定可靠的使用效果。若电路对容量稳定性或温度系数有更严格要求，应考虑 C0G/NP0 或使用并联策略优化性能。
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