WMSIC Electronic Components

muRata BLM03PX330SN1D

ModelBLM03PX330SN1D
Package0201
BrandmuRata
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
mu Rata BLM03PX330SN1D
Type
MURATA
Unit
Electronic Component
Minimum package
15000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
MURATA
Electronic Component
BLM03PX330SN1D
Electronic Component
1
Package
0201
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.008g
Electronic Component
1
Channel Count
1
Electronic Component
BM0001581550
Current
1.5A
@Frequency
33Ω@100MHz
Resistor(DCR)
55mΩ
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BLM03PX330SN1D 产品概述

一、产品简介

BLM03PX330SN1D 是村田(muRata)推出的一款微型磁珠,0201 封装、单通道设计,主要用于高频干扰抑制与电源/信号线的电磁兼容(EMC)优化。器件在 100MHz 时的阻抗为 33Ω,直流电阻(DCR)典型值为 55mΩ,额定持续电流 1.5A,阻抗误差规格 ±25%,适合对空间与性能都有严格要求的便携式与消费电子设备。

二、主要参数一览

  • 封装:0201(约 0.6 × 0.3 mm)单通道
  • 阻抗:33Ω @ 100MHz
  • 直流电阻(DCR):约 55 mΩ(典型)
  • 额定电流:1.5 A(持续)
  • 阻抗误差:±25%
  • 品牌:muRata(村田)

三、电气与性能特点

该磁珠在高频区(以 100MHz 为基准)表现出显著的阻抗,用于吸收并衰减高频噪声。低 DCR 保证了在直流及低频工作时的压降和功耗都较小,利于保持电源效率。±25% 的误差范围为典型磁珠公差,可满足一般 EMI 抑制设计要求。1.5A 的额定电流使其可用于中低功率电源轨与高速信号线。

四、典型应用场景

  • 手机、平板与可穿戴设备的电源噪声抑制
  • 模组与 PCB 上的电源/地线滤波(VCC、DVDD 等)
  • 无线通信设备与射频前端的 EMI 降噪配合
  • 工业与消费类电子的小型化滤波方案

五、选型与布局建议

  • 将磁珠尽量靠近噪声源(如电源开关器件或射频发射器)或靠近被保护的电路端布置,以获得最佳抑制效果。
  • 对于电源线,优选在电路入口或去耦电容与负载之间串联使用,配合旁路电容形成滤波网络。
  • 由于封装为 0201,焊接工艺要求严格,推荐按照村田推荐的回流曲线与焊盘设计进行贴装,保证可靠性。
  • 注意额定电流限制,若工作电流接近或超过 1.5A,应选用更大封装或更高额定电流的型号。

六、可靠性与注意事项

  • 频繁的大电流冲击或过高温度会改变磁珠特性,可能导致阻抗下降或直流电阻变化,设计时需留有裕量。
  • 封装极小,机械应力(如过度刮擦、弯曲)容易导致性能退化或失效,建议在 PCB 设计与后加工中采取防护措施。
  • 在高频抑制需求较强的场合,可结合不同频段阻抗特性的磁珠或 LC 网络以覆盖更宽频段的噪声抑制。

七、结论

BLM03PX330SN1D 以其 0201 的微小封装、在 100MHz 附近 33Ω 的有效阻抗和较低的 DCR(55mΩ)适用于空间受限且需对高频噪声进行抑制的应用场合。设计时应注意额定电流 1.5A 与封装工艺要求,在合理布局与配合旁路元件的前提下,能够为便携与消费类电子提供可靠的 EMI 抑制效果。若需更详细的温升、频率特性曲线与焊接工艺参数,建议参考村田官方数据手册。

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