WMSIC Electronic Components

muRata BLM03HD331SN1D

ModelBLM03HD331SN1D
Package0201
BrandmuRata
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
mu Rata BLM03HD331SN1D
Type
MURATA
Minimum package
15000

Technical parameters

Electronic Component
MURATA
Electronic Component
BLM03HD331SN1D
Electronic Component
1
Package
0201
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.008g
Electronic Component
1
Channel Count
1
Electronic Component
BM0257273198
Operating Temperature
55℃~+125℃
Current
200mA
@Frequency
330Ω@100MHz
Resistor(DCR)
1Ω
Electronic Component
15000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BLM03HD331SN1D 产品概述

一、产品简介

BLM03HD331SN1D 是村田(muRata)系列微型磁珠,用于高频干扰抑制与电磁兼容(EMC)设计。该器件封装为 0201(极小尺寸),单通道设计,标称阻抗为 330Ω @ 100MHz,允许误差 ±25%。适合对体积和布局有严格要求的移动设备、蓝牙/Wi‑Fi 模块、射频前端及供电滤波场合。

二、主要电气与环境参数

  • 阻抗(Z):330Ω @ 100MHz(典型值,±25%)
  • 直流电阻(DCR):1Ω
  • 额定电流:200 mA(连续)
  • 通道数:1
  • 工作温度范围:-55℃ ~ +125℃
  • 封装规格:0201(极小封装)
  • 品牌:muRata(村田)

这些参数说明该磁珠在 100MHz 附近对高频噪声有显著衰减能力,但小封装与相对较高的 DCR 限制了其在大电流电源路径的应用。

三、性能分析与工程影响

  • 阻抗特性:330Ω @100MHz 表明在无线通信和开关电源产生的高频干扰带宽内有良好抑制效果。实际应用中应参考厂家的频率响应曲线(阻抗随频率变化)以确定最优工作频段。
  • 直流电阻与功耗:DCR 为 1Ω,连续通过 200 mA 时产生的功耗约为 P = I^2·R = 0.2^2 × 1 = 0.04 W。虽然数值不大,但在密集布局或长期高温环境下仍需考虑温升与热累积。
  • 额定电流限制:200 mA 的额定电流来自热与电气可靠性考虑,超过该值会降低阻抗并加速老化,必要时应选用更大尺寸或低 DCR 的器件。

四、典型应用场景

  • 移动终端与可穿戴设备的射频滤波
  • 模块化无线通信(Wi‑Fi、蓝牙、IoT 节点)的输入/输出端干扰抑制
  • 模拟与数字电路之间的 EMI 隔离
  • 低电压电源线的高频噪声滤除(注意 DCR 和电流限制)

五、布局与使用建议

  • 靠近噪声源或受干扰输入端放置,以获得最佳抑制效果(例如靠近晶振、天线馈线或开关元件)。
  • 由于为单端磁珠,串联插入信号或电源线上即可;在电源回路使用时评估直流压降与功耗。
  • 0201 封装体积极小,焊接与回流工艺应严格控制;尽量采用 PCB 布局与焊膏量符合村田推荐的 PCB land pattern。
  • 在高温或高电流应用中应进行热仿真验证和实际测温测试,必要时加大散热或选用更大封装产品。

六、选择与替代建议

若需要更低的直流电阻或更高额定电流,可考虑更大封装(0402、0603)或采用低 DCR EMI 滤波器。同样若目标频段低于 100MHz,应核对器件在该频段的阻抗曲线,或选用适配频率的磁珠型号。

总结:BLM03HD331SN1D 以其小型 0201 封装和在 100MHz 附近的高阻抗,适合对空间要求严格且需抑制高频干扰的便携与射频设备。在设计时需权衡其 1Ω 的 DCR 与 200 mA 的电流能力,并按厂商建议的封装焊接和布局规范实施。

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