WMSIC Electronic Components

muRata BLM03PX800SN1D

ModelBLM03PX800SN1D
Package0201
BrandmuRata
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
mu Rata BLM03PX800SN1D
Type
MURATA
Unit
Electronic Component
Minimum package
15000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
MURATA
Electronic Component
BLM03PX800SN1D
Electronic Component
1
Package
0201
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.008g
Electronic Component
1
Channel Count
1
Electronic Component
BM0228046533
Operating Temperature
55℃~+125℃
Current
1A
@Frequency
80Ω@100MHz
Resistor(DCR)
130mΩ

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BLM03PX800SN1D 产品概述

一、产品简介

BLM03PX800SN1D 为村田(muRata)生产的一款微型磁珠(ferrite bead),封装尺寸为 0201,单通道设计。其在 100MHz 时的阻抗为 80Ω,直流电阻(DCR)约为 130mΩ,阻值公差 ±25%,额定通过电流 1A,工作温度范围 -55℃ 至 +125℃。该器件用于抑制电源与信号线的高频干扰,适合空间受限且对 EMI 控制有要求的便携与消费类电子产品。

二、主要性能要点

  • 阻抗:80Ω @ 100MHz(用于描述高频阻抗特性,实际频率响应为频率相关)
  • DCR(直流电阻):130mΩ(低 DCR 有利于减少电压降和功耗)
  • 额定电流:1A(适合小电流电源线和信号线滤波)
  • 封装:0201(超小型,适合高密度 PCB 布局)
  • 温度稳定性:工作温度 -55℃~+125℃,适用广泛环境

三、典型应用场景

  • 移动设备与可穿戴产品的电源线 EMI 抑制
  • 模块化电路(射频前端、基带板)中对地/电源线的滤波
  • 高密度主板上 USB、音频、传感器等接口的干扰抑制
  • 低功耗系统中与电源去耦电容配合使用,抑制高频噪声

四、布板与布局建议

  • 尽量靠近噪声源或电源进入点放置(例如芯片电源脚、接口处),以提高抑制效率。
  • 与去耦电容配合形成低通或吸收网络:磁珠串联于电源线上,去耦电容接地。
  • 0201 尺寸焊盘应考虑回流工艺与焊盘尺寸,避免焊点过小导致贴装困难或冷焊。
  • 布线尽量短且直,避免在磁珠两端形成环路以额外引入辐射。

五、焊接与可靠性提示

  • 遵循厂商推荐的回流焊曲线进行焊接,避免过高峰值温度与过长保温时间导致内部应力。
  • 在设计时考虑通过电流 1A 的热效应——长期大电流可能使器件温升增加,应在热仿真中验证。
  • 环境温度极端或机械振动场合建议进行可靠性验证(热循环、振动、湿热测试)。

六、选型注意事项

  • 阻抗标称值为 100MHz 处的参考值,实际在更高或更低频段可能变化,需参照完整频率响应曲线(如 EMI 抑制曲线)评估。
  • 若电路电流或允许压降更大,应选用 DCR 更低或额定电流更高的型号。
  • 多通道或共模抑制需求时,选择对应的双通道或共模滤波器件更为合适。

七、验证与测试建议

  • 在样机阶段使用频谱分析仪与网络分析仪测量插入损耗与噪声抑制效果。
  • 测量直流电阻时使用四线法以提高精度,确认实际 DCR 与热漂移情况。
  • 实际产品 EMI 测试(辐射与传导)是最终验证,必要时调整磁珠位置或阻抗等级以满足规范。

总结:BLM03PX800SN1D 以其 0201 超小封装、80Ω @100MHz 的阻抗以及较低 DCR,适用于对 PCB 布局密度和 EMI 抑制均有要求的移动与消费电子场景。选型时需综合考虑频率响应、额定电流与热管理,并在样机阶段进行完整的电磁兼容验证。

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