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muRata LQW18ANR18G00D
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- mu Rata LQW18ANR18G00D
- Type
- MURATA
- Unit
- Electronic Component
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- MURATA
- Electronic Component
- LQW18ANR18G00D
- Electronic Component
- 1
- Package
- 0603
- Type
- Display Inductor
- Electronic Component
- Power Inductor
- Electronic Component
- ±2%
- Electronic Component
- 0.034g
- Inductor
- 180nH
- Electronic Component
- 1
- Electronic Component
- BM0058417287
- Current
- 140mA
- Resistor(DCR)
- 2.2Ω
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LQW18ANR18G00D 产品概述
一、产品概要
LQW18ANR18G00D 是村田（muRata）生产的一款0603 封装非屏蔽功率电感。基础参数为：直流电阻（DCR）2.2Ω，电感值 180 nH，公差 ±2%，额定电流 140 mA。该器件体积小、精度高，适合尺寸受限且要求电感精度和稳定性的高频电源或滤波场合。
二、电气性能与计算参考
- 直流电阻 DCR = 2.2Ω：在直流或低频下，会带来显著的 I^2·R 损耗。按额定电流 140 mA 计算，最大直流损耗 P = I^2·R ≈ 0.14^2×2.2 ≈ 0.043 W（约 43 mW）。设计时须评估该损耗对效率和温升的影响。
- 交流阻抗（近似）：X_L = 2πfL。举例：在 10 MHz 时 X_L ≈ 2π×10e6×180e-9 ≈ 11.3 Ω；在 100 MHz 时 X_L ≈ 113 Ω。说明在高频下对噪声抑制效果更明显。
- ±2% 精度：适合需要较严格元件配对与频率响应控制的电路。需注意电感随直流偏置与温度可能发生衰减，实际值请参考厂方数据或实际测量。
三、封装与可靠性注意
- 封装为 0603（约 1.6×0.8 mm），适合高密度 PCB 布局。
- 非屏蔽结构可能在高频开关环境中产生更大的散射磁场，若 EMI 要求高，需评估是否改用屏蔽型。
- 焊接与可靠性：建议遵循村田推荐的回流焊工艺与温度曲线，避免超温或反复回流导致性能退化。长期工作时建议按经验对额定电流进行降额（例如 70–80%）以提高可靠性。
四、典型应用
- 开关电源滤波（高频旁路或输入滤波）
- EMI/射频噪声抑制网络
- 高频电源分支、射频前端的隔离或阻抗调节
由于 DCR 较高，此类电感更适合噪声抑制与阻抗匹配场合，而非低损耗大电流的主电源电感。
五、布局与选型建议
- 布局：将电感尽量靠近噪声源或开关器件，缩短回流环路，必要时增加地平面与过孔来改善散热与屏蔽。
- 选型：若关心效率与压降，应考虑选用 DCR 更低或额定电流更高的型号；若关心 EMI 干扰，优先考虑屏蔽型或更高频特性的器件。
- 验证：在目标电路下进行直流损耗、温升和频率响应测试，尤其在带直流偏置时测量电感实际值。
六、采购与资料
正式设计与采购前，请参考村田官方数据手册（datasheet）获取详尽的频率特性、饱和特性、温升曲线和焊接条件。若需替换，查找相同尺寸与电感值但 DCR/Irating 更适配的型号，或咨询分销商获取样片验证。
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