WMSIC Electronic Components

muRata GRM032R60J105ME05D

ModelGRM032R60J105ME05D
Package0201
BrandmuRata
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
mu Rata GRM032R60J105ME05D
Type
MURATA
Minimum package
15000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MURATA
Electronic Component
GRM032R60J105ME05D
Electronic Component
1
Electronic Component
1uF
Package
0201
Electronic Component
SMD Capacitor(MLCC)
Electronic Component
±20%
Electronic Component
0.008g
Electronic Component
1
Electronic Component
BM0264857021
Electronic Component
X5R
Voltage
6.3V
Electronic Component
Electronic Component
Electronic Component
15000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GRM032R60J105ME05D 产品概述

一、规格概述

GRM032R60J105ME05D 为 muRata(村田)系列的片式多层陶瓷电容(MLCC),基础参数如下:额定电容 1.0 µF,容差 ±20%,额定电压 6.3 V,介质材料 X5R,封装尺寸 0201(极小型贴片)。此型号主打高密度封装下的去耦与滤波功能,适用于空间受限、移动设备等对尺寸和焊接工艺要求高的场景。

二、主要性能特点

  • 体积极小(0201),适合高密度布局与微型化产品。
  • X5R 介质在温度范围内(通常至 +85°C)具有相对稳定的电容表现,适合一般工业和消费电子温度等级的应用。
  • 额定电压 6.3 V,适用于低压电源旁路、CPU/GPU/PMIC 的局部去耦。
  • 良好的高频响应与低等效串联电阻(ESR),在去耦和快速瞬态吸收方面表现优良。

三、电气行为与设计注意事项

  • DC-bias 效应:在高介质常数的 MLCC 上,施加直流偏压会导致有效电容下降。尤其是 0201 尺寸的 1 µF / 6.3 V 类型,在接近额定电压工作时电容可能明显降低。设计时应评估实际工作电压下的剩余电容。
  • 温度与容差:所列容差为 ±20%,在温度变化下的总容差需同时考虑温度系数(X5R)与初始公差,关键电路请预留裕量。
  • 机械应力敏感:0201 封装对焊接应力和基板翘曲敏感,开模与焊盘设计需符合制造商推荐以减少破裂风险。

四、典型应用场景

  • 手机、平板、可穿戴设备等移动终端的电源旁路与本地去耦。
  • IoT 模组、蓝牙/无线通信卡的滤波与稳定电路。
  • 精密小型传感器和低功耗微控制器的局部电容储能与瞬态响应场合。

五、封装与工艺建议

  • 贴片工艺:建议采用精密贴装设备与适配 0201 的吸嘴,控制回流焊曲线以避免过热或过快冷却引起的应力。
  • 焊盘设计:参考村田推荐的 land pattern,焊膏量不要过多以避免浮焊或桥接,过少又会降低焊接强度。
  • 检测与可靠性:对于关键器件推荐进行 X-ray 或目检以确认焊接质量;在高可靠性项目中考虑热循环和振动测试。

六、选型要点与替代建议

  • 若电路对有效电容要求严格,建议验证在实际偏压和温度条件下的电容值;必要时选择额定电压更高或更大容差/更稳定介质(如 X7R / 更高V)型号。
  • 对于需要更低 ESR 或更大电流承受能力的应用,可考虑尺寸稍大的封装或专用钽电容/固态电容作为替代。

总结:GRM032R60J105ME05D 以 0201 超小封装、1 µF 容值和 X5R 介质在移动与微型化产品中提供良好的去耦与滤波解决方案。设计时应重点关注 DC-bias、温度特性与焊接工艺,以确保在实际工作条件下满足电路性能要求。

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