WMSIC Electronic Components

MICROCHIP TC4427COA713

ModelTC4427COA713
PackageSOIC-8
BrandMICROCHIP
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MICROCHIP TC4427COA713
Type
MICROCHIP
Minimum package
3300 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MICROCHIP
Electronic Component
TC4427COA713
Electronic Component
1
Package
SOIC-8
Electronic Component
Gate Driver IC
Electronic Component
0.169g
Electronic Component
1
Electronic Component
BM0227698659
Operating Temperature
0℃~+70℃
Operating Voltage
4.5V~18V
Load Type
MOSFET
Current(IOH)
1.5A
Current(IOL)
1.5A
Driver Channel Count
2
(tr)
19ns

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TC4427COA713 产品概述

一、概述

TC4427COA713 是美国微芯(Microchip)推出的一款低端、双通道非反相 MOSFET 栅极驱动器 IC,采用标准 8 引脚 SOIC 封装。器件面向需要可靠、高瞬时输出电流以快速切换功率 MOSFET 的场合,提供对称的源/吸电能力(IOH/IOL 均为 1.5A),工作电压范围宽(4.5V 至 18V),能够在商业温度范围内稳定工作(Ta = 0℃ ~ +70℃)。器件静态电流低(Iq 典型 400µA),适合对功耗有一定要求的系统设计。

二、主要特性

  • 双通道非反相输出,分别驱动两只 MOSFET 的栅极;通道相互独立。
  • 输出吸/灌电流:IOH = 1.5A、IOL = 1.5A(瞬态大电流能力,适合快速充放电栅电容)。
  • 工作电压范围:VCC = 4.5V ~ 18V,兼容常见的驱动电压域。
  • 上升/下降时间(tr / tf):典型 19ns(具体值随负载和电源条件变化)。
  • 工作温度范围:Ta = 0℃ ~ +70℃(商业级)。
  • 静态电流(待机/Iq):约 400µA(VCC 供电时 IC 自身静态消耗)。
  • 小封装:SOIC-8,便于 PCB 布局和批量生产装配。
  • 非反相输入,逻辑驱动简单直接,易与 MCU、FPGA 或逻辑门级电路配合。

三、典型应用

  • 开关电源(SMPS)中功率 MOSFET 的栅极驱动(低侧驱动)。
  • 电机驱动、步进与 BLDC 驱动器的栅极驱动阶段。
  • 同步整流、降压/升压变换器中提升开关效率的驱动单元。
  • 车载电源(符合 4.5V–18V 工作电压范围的辅助供电)。
  • 一般功率开关电路、继电器/电磁阀的驱动(需要快速切换时)。

四、功能描述与工作原理

TC4427COA713 为每通道提供一个电平放大输出级,输入端接受来自逻辑电平的开关信号,输出端则将 VCC 电压快速施加到 MOSFET 栅极或将其拉低至接地。器件采用推挽输出结构,能在栅电容充放电过程中提供高瞬态电流,从而缩短 MOSFET 的开关时间,降低开关损耗。由于为非反相结构,输入高电平对应输出高电平,输入低电平对应输出低电平,接口直观且易于连线。

五、关键电气参数(摘要)

  • 驱动通道数:2
  • 输出电流:吸/灌电流 IOH/IOL = 1.5A(瞬态能力)
  • 工作电压:4.5V ~ 18V
  • 上升时间/下降时间:典型 tr = 19ns、tf = 19ns(见具体测试条件)
  • 静态电流:约 400µA(Iq)
  • 工作温度:Ta = 0℃ ~ +70℃(商业级)
    注:具体的极限参数、热阻、输入阈值和典型性能随外部负载与 PCB 温升有关,设计时应参考器件完整数据手册。

六、封装与引脚

  • 封装:SOIC-8(标准 8 引脚小外形封装),适合自动化贴装。
  • 引脚功能通常包括:两个输入、两个输出、VCC、GND,以及供电/地的旁路位置。具体引脚排列和功能请参考 Microchip 官方数据手册和封装图纸以确保接线无误。

七、设计与布局建议

  • 电源去耦:在 VCC 与 GND 之间靠近器件放置 0.1µF 陶瓷旁路电容,同时可并联更大电容(如 1µF~10µF)以平滑供电瞬态。
  • 地与走线:为减小回路电感,尽量使用完整的地平面并将高电流回路(驱动输出到 MOSFET 栅极)与敏感模拟/逻辑地分开走线。
  • 输出阻尼:对于高 dV/dt 场合建议在输出与 MOSFET 栅极之间串联小电阻(常见 5Ω~100Ω),以抑制振铃并限制浪涌电流。
  • 热管理:虽然静态功耗低,但在高频切换时输出驱动产生的损耗会增加,注意评估 PCB 温升并预留足够的铜层散热。
  • 保护与滤波:必要时在输入端加入抗干扰滤波、在输出侧加栅极箝位或 TVS(视系统需求而定)。

八、选型与注意事项

  • 若系统需要在更宽温度范围或更高工作电压下使用,请参考 Microchip 的其他产品线或选择工业级/汽车级器件。
  • 上升/下降时间与实际负载(栅电容)和串联电阻强相关,设计时应以目标 MOSFET 的栅容为基准做仿真和实验验证。
  • 若需高侧驱动或浮动栅极驱动,请考虑配套的高侧驱动器或隔离/bootstrapped 驱动方案,TC4427COA713 适合用作低侧固定参考的驱动器。

总结:TC4427COA713 提供了在 4.5V–18V 电源范围内、对称 1.5A 高瞬态驱动能力的双通道非反相 MOSFET 栅极驱动解决方案,封装紧凑、静态功耗低,适合多种中功率开关应用。设计时重视旁路、布局与栅极阻尼,可发挥器件快速切换、降低开关损耗的优势。若需完整电气特性、引脚配置以及绝对最大额定值,请参阅 Microchip 官方数据手册。

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