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MICROCHIP DN3545N8-G DN3545N8
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MICROCHIP DN3545N8-G
- Type
- MICROCHIP
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MICROCHIP
- Electronic Component
- DN3545N8-G
- Electronic Component
- 1
- Package
- SOT-89-3
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.108g
- Electronic Component
- 1
- Electronic Component
- BM0209267969
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.6W
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
- Voltage(Vdss)
- 450V
- Capacitor(Ciss)
- 360pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：DN3545N8-G
DN3545N8-G 是一款由MICROCHIP（美国微芯科技）公司生产的N通道MOSFET，属于金属氧化物场效应管（MOSFET）系列，适用于高压和高温环境下的电子设备。该产品采用SOT-89表面贴装型封装，具有优良的热管理能力和高效的电气特性，非常适合用于各种功率管理和转换应用。
基本特性
DN3545N8-G的关键参数包括：
- FET类型：N通道
- 漏源电压（Vdss）：450V
- 最大持续漏极电流（Id@25°C）：200mA
- 最大导通电阻（Rds On）：20Ω @ 150mA，0V
- 功率耗散（最大值）：1.6W（Ta）
- 工作温度范围：-55°C 至 150°C（TJ）
- 输入电容（Ciss）：360pF @ 25V
- 最大Vgs：±20V
应用领域
DN3545N8-G尤其适用于要求高电压和高可靠性的应用场景。其常见的应用包括但不限于：
电源管理：可用于开关电源和电压转换器，以承受高电压要求，提高系统的效率和稳定性。
电机驱动：在各种电机控制系统中，作为开关元件提供高效的电流控制，尤其是在电动机的驱动电路中。
自动化设备：在工业自动化领域，可以用作继电器和负载开关的控制元件，以实现智能化控制。
汽车电子：适用于汽车电子控制单元（ECU）中的高压低功耗开关，提供可靠的性能。
通讯设备：在射频功率放大器和信号处理电路中，用作开关元件，以实现高效的功率控制。
性能优势
DN3545N8-G具有以下性能优势：
高耐压：450V的漏源电压使其可以在高电压环境下稳定工作。
宽温范围：-55°C至150°C的工作温度范围使其适合在极端环境中使用，确保其在军事、航空、汽车等行业的可靠性。
低导通损耗：相对较低的导通电阻为200mA的电流提供了良好的导通性能，从而减小了功耗，提高了系统效率。
小型封装：采用TO-243AA(SOT-89)封装，节省电路板空间，便于在小型化设计中使用。
结论
DN3545N8-G N通道MOSFET是应对高压和高温应用的重要元件，它不仅满足了当今电子设备对高效能和小型化设计的要求，还在多个行业中发挥着关键作用。无论是在电源管理、自动化设备还是汽车电子领域，DN3545N8-G均提供了优秀的性能表现，是实现高效电能转换和控制的理想选择。 通过选择DN3545N8-G，设计工程师可以有效提升产品的可靠性和使用寿命。
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