WMSIC Electronic Components

MICROCHIP LND150N8-G LND150N8

ModelLND150N8-G
PackageSOT-89
BrandMICROCHIP
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MICROCHIP LND150N8-G
Type
MICROCHIP
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MICROCHIP
Electronic Component
LND150N8-G
Electronic Component
1
Package
SOT-89
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.084g
Electronic Component
1
Electronic Component
BM0223608616
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.6W
Electronic Component
Electronic Component
Electronic Component
2000
Voltage(Vdss)
500V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LND150N8-G是一款由美国微芯科技公司(Microchip Technology Inc.)生产的高性能N通道MOSFET,专为具有稀缺空间的小型电子设备设计。该产品采用SOT-89-3封装,具有优异的热性能和高电压承受能力,广泛应用于通讯、汽车电子、消费电子以及工业控制等领域。以下是该产品的详细概述。

1. 产品参数

LND150N8-G具备一系列出色的电气特性,使其在高性能应用中表现优异。其主要参数包括:

  • FET类型:N通道,适合各种高电压工作环境。
  • 工作温度范围:-55°C 至 150°C,确保设备在极端环境下的可靠运行。
  • 漏源电压(Vdss):高达500V,支持高达500V的电流输出,适合高压场合。
  • 连续漏极电流(Id):最大30mA,适应多种微小负载应用。
  • 导通电阻(Rds On):在500µA和0V下最大值为1000Ω,适用于低功率损耗的场合。
  • 输入电容(Ciss):在25V下最大值为10pF,具有低输入电容特性,减少开关损耗,提升工作效率。
  • 功率耗散(P):最大功率耗散为1.6W,适合中低功率应用。

2. 技术特性

LND150N8-G有如下技术特性:

  • N通道耗尽模式:这种设计允许装置在关断时与负载形成高阻抗状态,而在导通时则提供低阻抗,有效管理电流流动。
  • 最大栅极源电压(Vgs):±20V,适合多种驱动电路需求,且能增强器件的抗干扰能力。
  • 表面贴装型:SOT-89-3封装有助于简化安装过程并减少占用的PCB空间,方便OEM厂商在对空间要求高的设备上实现高效电路设计。

3. 应用领域

LND150N8-G因其卓越的电气特性和宽广的工作温度范围,适用于以下应用:

  • 高压开关电源:适应要求高电压和功耗受限的开关电源模块设计。
  • 通信设备:在发射和接收电路中,提供高精度开关和调制。
  • 汽车电子:用作汽车控制系统中的开关元件,例如电机驱动和灯光控制。
  • 消费电子:广泛应用于便携式设备、家电及其他智能设备中,实现智能电源管理。
  • 工业控制:在PLC、传感器及其他自动化设备中提供可靠的开关性能。

4. 可靠性与稳定性

LND150N8-G经过严酷的测试和验证,具有良好的长期稳定性和可靠性,能够在恶劣的环境条件下有效工作。即使在高温和高压条件下,该MOSFET依然能保证低损耗高效率的电流切换。广泛的工作温度范围使其在极端应用场合中具备极佳的适应性。

5. 总结

总之,LND150N8-G是一款兼具高电压处理能力和低功耗特性的N通道MOSFET,非常适合于需要可靠性能的现代电子产品。凭借其出色的电气性能、小型化设计和良好的制程技术,LND150N8-G在市场上展现了良好的性价比,不断满足各类应用的需求。同时,其高效的散热性能以及广泛的工作范围,确保其在各种严苛环境中的可靠工作,是设计师与工程师在选择电源管理解决方案时的重要选择。

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