WMSIC Electronic Components

MICROCHIP SST25VF016B-50-4I-S2AF-T SST25VF016B

ModelSST25VF016B-50-4I-S2AF-T
PackageSOIC-8-208mil
BrandMICROCHIP
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MICROCHIP SST25VF016B-50-4I-S2AF-T
Type
MICROCHIP
Minimum package
2100 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MICROCHIP
Electronic Component
SST25VF016B-50-4I-S2AF-T
Electronic Component
1
Package
SOIC-8-208mil
Electronic Component
NOR FLASH
Electronic Component
0.411g
Electronic Component
1
Electronic Component
BM0228538845
Electronic Component
16Mbit
Operating Voltage
2.7V~3.6V
Current
5uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
50MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SST25VF016B-50-4I-S2AF-T 产品概述

一、产品简介

SST25VF016B-50-4I-S2AF-T 为 Microchip(原 SST)系列的 16Mbit 串行 SPI 闪存器件,组织形式为 2M x 8,工作电压范围 2.7V ~ 3.6V,最高 SPI 时钟频率 50MHz,器件以 SOIC-8(208mil)封装提供。该器件面向嵌入式存储、固件/引导代码、配置与数据记录等场景,兼顾低功耗与高可靠性。

二、主要规格与电气性能

  • 存储容量:16 Mbit(2M × 8)
  • 接口类型:SPI 串行接口,最高时钟频率 fc = 50 MHz
  • 工作电压:2.7 V ~ 3.6 V
  • 待机电流:典型 5 μA(具体视器件状态及工作模式而定)
  • 擦写寿命:100,000 次(典型)
  • 数据保留(TDR):100 年(典型)
  • 封装:SOIC-8-208mil

(以上参数为器件关键特性,使用时应参阅最新资料以获取温度、时序与电流在不同模式下的详细值。)

三、封装与引脚说明

器件采用 SOIC-8-208mil 封装,适用于手工焊接与自动贴装生产。引脚包含电源、地、SPI 信号(SCLK、SI、SO)以及片选与控制引脚(例如 WP、HOLD/RESET 等,具体命名与功能请参见规格书)。封装利于 PCB 布局与散热,适合各种工业与消费级产品。

四、主要特性与优势

  • 兼容标准 SPI,总线占用少,适合集成到 MCU 或 FPGA 系统
  • 低电压工作(2.7–3.6V),便于与 3.3V 系统直接接口
  • 低待机电流,有利于电池供电产品的能耗优化
  • 高耐久与长数据保留,满足固件存储与长期数据保存需求
  • SOIC-8 小封装,节约 PCB 面积并便于大批量采购与替换

五、典型应用场景

  • 嵌入式系统固件与引导代码(Bootloader、BIOS)
  • 工业控制器与仪表的非易失性参数存储
  • 消费类电子的配置、校准数据存储
  • 网络设备、通信模块的字库与固件升级存储

六、设计与使用建议

  • 电源与去耦:在 VCC 与 GND 之间靠近器件放置 0.1 μF 陶瓷去耦电容,同时考虑 1 μF~10 μF 的旁路以稳定瞬态电流。
  • 信号完整性:保持 SPI 时钟与数据线尽量短,必要时在信号线上并联小阻抗(22–47 Ω)以抑制反射与 ringing。
  • 保护与上拉:按规格书对 WP/HOLD 等控制脚配置适当上/下拉电阻,写保护策略应在系统设计阶段明确。
  • 电压兼容:若主控电压非 2.7–3.6V,须采用电平转换措施,避免损坏器件。
  • 烧录与擦写:遵循页编程与扇区/块擦除规范,避免频繁全片擦写以延长擦写寿命。

七、可靠性与合规

器件提供 100k 次擦写耐久及 100 年典型数据保留,在多数工业与消费应用中具备良好可靠性表现。为满足长期可靠性与生产一致性,建议在设计与量产阶段索取并参考最新的 Microchip/SST 数据手册、器件可靠性报告与封装指引。

如需下一步:可提供完整数据手册关键页、等效电路与 PCB 推荐脚位布局图,或根据具体应用给出最快速写/读策略与测试建议。

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