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MCC 2N7002K-TP 2N7002K
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- MCC 2N7002K-TP
- Type
- MCC
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- MCC
- Electronic Component
- 2N7002K-TP
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0257642446
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：2N7002K-TP N通道MOSFET
2N7002K-TP是由美微科（MCC）生产的一款高性能N通道金属氧化物半导体场效应管（MOSFET），其设计专为高效能的开关和线性应用而打造。凭借其60V的漏源电压（Vdss）、340mA的连续漏极电流（Id）和低导通电阻，2N7002K-TP在良好的热管理和小尺寸封装下，尤其适合于便携式电子设备、负载开关电源及其他小功率应用。
1. 基本参数
1.1. 漏源电压（Vdss） 2N7002K-TP具有最高60V的漏源电压，适合于中压应用，确保在大多数常见电源电压下稳定工作。
1.2. 连续漏极电流（Id） 在环境温度为25°C时，连续漏极电流可达340mA。该规格使其能够处理相对较高的电流负载，满足各种负载需求。
1.3. 导通电阻（Rds On） 在10V的栅极驱动电压（Vgs）下，2N7002K-TP的最大导通电阻为5欧姆（@ 500mA）。这一特性确保在开关操作中损耗较小，从而提高系统的整体效率。
1.4. 栅源阈值电压（Vgs(th)） 该MOSFET的栅源阈值电压（Vgs(th)）最大为1V（@1mA），意味着在较低的栅极电压下就能开始导通，因此适合于低电压控制电路。
2. 特性与应用
2.1. 工作温度范围 2N7002K-TP的工作温度范围为-55°C至150°C，适用于多种工业环境，特别是高温和低温应用。
2.2. 功率耗散 其最大功率耗散能力为350mW，这使得该元器件能够在确保可靠性的前提下，承受较大的功耗。
2.3. 封装类型 2N7002K-TP采用小型表面贴装封装（SOT-23），该封装形式利于轻量化设计和高密度布线，适合于现代小型电子设备。
3. 应用场合
2N7002K-TP的设计特点使其适用于以下多个领域：
- 开关电源：能够高效开关小型负载，在电源管理中扮演重要角色。
- 负载开关：可用于控制小型电机、继电器等设备的电源，使得电路设计更为灵活。
- 信号调理：适合用于信号放大和条件调节电路，为信号转换提供支撑。
- 电子开关：利用其低导通电阻和快速切换特性，广泛应用于电子开关和传感器控制。
4. 总结
作为一款高效、稳定且适用广泛的小功率N通道MOSFET，2N7002K-TP凭借其优越的电性能、良好的热管理特性和紧凑的封装设计，成为了现代电子设备中不可或缺的重要元件。无论是在消费电子、工业控制还是汽车电子等领域，2N7002K-TP都能够为设计工程师提供可靠的解决方案，以满足日益增长的技术需求和市场趋势。
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