WMSIC Electronic Components

MCC MMBT3904T-TP MMBT3904T

ModelMMBT3904T-TP
PackageSOT-523
BrandMCC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MCC MMBT3904T-TP
Type
MCC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MCC
Electronic Component
MMBT3904T-TP
Electronic Component
1
Package
SOT-523
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0263523456
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
150mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT3904T-TP 产品概述

一、产品简介

MMBT3904T-TP 是一款由美微科(MCC)提供的高性价比小信号NPN晶体管,采用SOT-523超小尺寸封装,专为便携式和高密度电路设计。器件具有40V集电极-射极击穿电压、200mA 集电极电流能力与典型150mW耗散功率,适合低功耗开关与宽带小信号放大场合。

二、主要参数

  • 晶体管类型:NPN
  • 集电极电流(Ic):200mA(最大)
  • 集射极击穿电压(Vceo):40V(最大)
  • 耗散功率(Pd):150mW(封装限制)
  • 直流电流增益(hFE):约100(典型)
  • 特征频率(fT):300MHz(典型)
  • 集电极截止电流(Icbo):50nA(典型)
  • 集电极饱和电压(VCE(sat)):约300mV(典型)
  • 射基极击穿电压(Vebo):6V(最大)
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:SOT-523(超小型)
  • 数量:1个

三、性能特点

  • 小尺寸封装(SOT-523):适用于高密度SMT线路板,节省空间。
  • 低噪声、宽带宽:fT达300MHz,可用于高速开关和射频前端的低功耗放大。
  • 低泄漏与低饱和压:Icbo低至50nA,VCE(sat)约300mV,利于提高开关效率和降低功耗。
  • 宽工作温度:-55℃至+150℃,适配工业级环境。

四、典型应用

  • 小信号开关与驱动(便携式设备、传感器接口)。
  • 低功耗放大器与前置级(音频与射频低功率信号)。
  • 数字逻辑电平转换、驱动继电器或小继电器的前置级。
  • 电路原型替换2N3904等通用NPN器件的超小封装方案。

五、使用建议与注意事项

  • 功率与散热:SOT-523封装的耗散功率仅150mW,实际应用中需考虑PCB散热和环境温度,必要时进行功率降额使用。
  • 驱动与保护:为保证稳定开关与避免过大基极电流,应按设计需要配置限流电阻;避免基-射极反向电压超过6V。
  • 引脚与封装:SOT-523为微型封装,引脚间距小,焊接及维修时需注意防止短路与焊接损伤;生产中建议采取标准回流焊工艺并做好ESD防护。
  • 最大额定值:在任何情况下均不得超过标称的Ic、Vceo与Pd,避免器件损坏。

六、替代与配套建议

MMBT3904T-TP 适合作为需小尺寸、通用NPN性能的替代件。根据系统性能需求,可选择具有更高功率耗散或不同增益特性的同类器件;在关键射频或高功率场合,建议选用专门设计的射频晶体管或更大封装的功率器件。

如需进一步的封装图、引脚定义、测试条件(如VCE(sat)在何种Ic/Ib下测得)或电路实例图,请提供具体应用场景,以便给出更精确的工程建议。

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