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MCC DTC114EUA-TP DTC114EUA
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MCC DTC114EUA-TP
- Type
- MCC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MCC
- Electronic Component
- DTC114EUA-TP
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 NPN
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0259314236
- Resistor
- 1
- Resistor
- 10kΩ
- Transistor Type
- NPN
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DTC114EUA-TP 产品概述
一、主要性能特点
DTC114EUA-TP 是美微科（MCC）推出的一款预偏置单粒 NPN 晶体管，面向高速开关与信号接口场景。器件额定集电极-发射极电压达 50V，最大集电极电流 100mA，耗散功率 Pd=200mW，具有良好的耐压与小信号驱动能力。直流电流增益 hFE≈30（测试条件：IC=5mA，VCE=5V），单位器件频率特性高，fT≈250MHz，适合高速开关与射频前端小信号放大。
二、电气与热参数
- 最大集电极-发射极电压 VCE(max)：50V
- 最大集电极电流 IC(max)：100mA
- 功耗 Pd：200mW（封装与 PCB 散热影响显著）
- 直流电流增益 hFE：30（IC=5mA，VCE=5V）
- 开关阈值：导通时典型输入电压约 3V（在输入约 10mA 条件下）；基-发射导通压约 0.3V；关断时输入电压最大约 500mV。
- 内置偏置电阻：输入阻抗约 10kΩ，内阻比率约 1（用于设置预偏置工作点）。
- 导通电压 VO(on) 典型值约 300mV（在相应电流下测得）。
三、内置偏置结构与引脚说明
DTC114EUA-TP 为预偏置器件，内部集成基极偏置电阻，简化外部驱动电路。典型用途为以单端逻辑信号直接驱动而无需外接基极限流或偏置电阻。输入端对地呈高阻（约 10kΩ），适合带有微控制器或逻辑电平的直接接口。具体引脚排列与功能请参考器件引脚图与封装手册。
四、典型应用
- 逻辑电平移位与缓冲：预偏置结构便于将 MCU/逻辑信号驱动到较高电压或开关负载。
- 小信号高速开关：fT≈250MHz 适合高速脉冲与信号整形场合。
- 低功耗电子开关、驱动低电流继电器或指示负载。
- 通用放大器前级或开关阵列中的单元器件。
五、封装与工程注意事项
- 封装：SOT-323（表面贴装），适合高密度 PCB。
- 热管理：Pd=200mW，须注意 PCB 铜箔面积与热流散布局以避免过热；在高环境温度或连续工作时需检查结温。
- 驱动与保护：尽管器件集成偏置，外部仍建议根据实际电流与负载加配限流或保护元件（如基极过压保护、集电极限流）以提高可靠性。
- 兼容性：在替代或设计替换时，请核对内置电阻值、阻值比及阈值，确保逻辑兼容与开关性能满足系统要求。
总结：DTC114EUA-TP 以其预偏置设计、小尺寸封装与良好的频率特性，适合需要简单驱动接口与高速响应的消费电子与工业控制应用。选择时请结合系统电流、热耗与 PCB 散热能力做综合评估。
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