WMSIC Electronic Components

MCC SI2303-TP SI2303

MCC SI2303-TP SI2303
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Product image

ModelSI2303-TP
PackageSOT-23
BrandMCC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

19 specifications

Core information

Product name
MCC SI2303-TP
Type
MCC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MCC
Electronic Component
SI2303-TP
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.036g
Electronic Component
1
Electronic Component
BM0263676776
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2303-TP 产品概述

1. 产品简介

SI2303-TP 是一款由美微科（MCC）生产的 P 沟道 MOSFET（金属氧化物半导体场效应晶体管），采用表面贴装型封装（SOT-23）。该器件具有低导通电阻、高开关速度和优异的功率耗散性能，适用于各种低电压、高电流的开关应用。

2. 关键特性

  • 驱动电压（最大 Rds On，最小 Rds On）: 10V
  • 安装类型: 表面贴装型
  • 功率耗散（最大值）: 250mW（Ta）
  • Vgs（最大值）: ±20V
  • 25°C 时电流 - 连续漏极 (Id): 3A（Ta）
  • 技术: MOSFET（金属氧化物）
  • 不同 Id 时 Vgs(th)（最大值）: 3V @ 250µA
  • 不同 Vgs 时栅极电荷 (Qg)（最大值）: 10nC @ 10V
  • 漏源电压（Vdss）: 30V
  • 不同 Vds 时输入电容 (Ciss)（最大值）: 226pF @ 100V
  • FET 类型: P 通道
  • 不同 Id、Vgs 时导通电阻（最大值）: 180 毫欧 @ 2A，4.5V
  • 工作温度: -55°C ~ 150°C（TJ）

3. 应用领域

SI2303-TP 广泛应用于以下领域：

  • 电源管理: 用于 DC-DC 转换器、电池保护电路等。
  • 负载开关: 适用于低电压、高电流的负载开关应用。
  • 电机驱动: 用于小型电机的驱动和控制。
  • 便携式设备: 适用于智能手机、平板电脑等便携式设备的电源管理。

4. 性能优势

  • 低导通电阻: 最大导通电阻仅为 180 毫欧，有效降低功率损耗，提高效率。
  • 高开关速度: 低栅极电荷（Qg）和输入电容（Ciss）确保快速开关，适用于高频应用。
  • 宽工作温度范围: 工作温度范围为 -55°C 至 150°C，适应各种环境条件。
  • 高可靠性: 采用先进的 MOSFET 技术，确保器件的高可靠性和长寿命。

5. 封装与引脚配置

SI2303-TP 采用 SOT-23 封装，具有三个引脚：

  • 引脚 1 (Gate): 栅极，用于控制 MOSFET 的导通和截止。
  • 引脚 2 (Source): 源极，电流的输入端。
  • 引脚 3 (Drain): 漏极，电流的输出端。

6. 使用注意事项

  • 驱动电压: 确保栅极驱动电压不超过 ±20V，以避免器件损坏。
  • 功率耗散: 在设计中考虑器件的功率耗散，确保不超过 250mW。
  • 温度管理: 在高功率应用中，注意器件的温度管理，避免过热。
  • 静电防护: 在操作和存储过程中，采取适当的静电防护措施，防止静电损坏。

7. 结论

SI2303-TP 是一款高性能的 P 沟道 MOSFET，具有低导通电阻、高开关速度和宽工作温度范围等优点，适用于多种低电压、高电流的开关应用。其紧凑的 SOT-23 封装和高可靠性使其成为便携式设备、电源管理和电机驱动等领域的理想选择。

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