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BSS138-TP 是一款高性能的 N 沟道金属氧化物半导体场效应管(MOSFET),专为低功耗电路设计。其典型参数包括最大漏源电压为 50V 和连续漏极电流 220mA,使其适合于多种低功耗应用场景。该器件采用 SOT-23 封装,体积小巧,非常适合于需要高密度布局的现代电子产品中。
工作电压与电流: BSS138-TP 的漏源电压 (Vdss) 达到 50V,足够用于多种中等电压的应用。同时,最大连续漏极电流为 220mA(在 25°C 时),能够应对一般负载需求。
阈值电压: 栅源极阈值电压 (Vgs(th)) 为 1.5V @ 1mA,表明该 MOSFET 可在较低的栅电压下开始导通,适合驱动各种低压电路,特别是在逻辑电平信号下表现良好。
导通电阻: 在驱动电压为 10V 时,最大漏源导通电阻 (Rds(on)) 达到 3.5Ω @ 220mA。这一低导通电阻有效降低了功率损耗并增加了效率,对于需要高效能传输的应用,尤其重要。
功率耗散: BSS138-TP 的最大功率耗散为 350mW(在 25°C 环境下)。合理的功率耗散能力使得该器件能在更高负载和温度环境下安全运行。
工作温度范围: 该元件的工作温度范围广,支持 -55°C 到 150°C 的温度范围,能够适应极端环境。在高温或低温的工业应用中表现优秀。
封装与安装类型: BSS138-TP 采用 SOT-23 表面贴装封装,满足现代电子产品对空间紧凑和高集成度的要求。该封装设计支持自动化生产线,有助于提高生产效率。
BSS138-TP 可广泛应用于以下领域:
在使用 BSS138-TP 时,设计师应注意以下几点:
总体而言,BSS138-TP 是一款可靠且高效的 N 沟道 MOSFET,适合多种低功耗应用。凭借其良好的电气特性和可靠性,BSS138-TP 成为设计师在选择开关元件时的理想选择。无论是在消费电子、工业控制还是汽车电子中,BSS138-TP 能得到良好的应用表现。
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Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
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