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MCC SI2319-TP SI2319
Configuration
1 options
Configuration
Option 137392
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MCC SI2319-TP
- Type
- MCC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MCC
- Electronic Component
- SI2319-TP
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 1g
- Electronic Component
- 1
- Electronic Component
- BM0264353266
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.4W
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2319-TP 产品概述
一、产品简介
SI2319-TP 是美微科（MCC）提供的一款 P 沟道增强型 MOSFET，采用紧凑的 SOT-23 封装，适合对空间和成本敏感的便携式及嵌入式电源管理场景。器件设计用于中低功率高侧开关、反向保护和功率路径控制，兼顾开通电阻与开关损耗的平衡。
二、主要规格
- 类型：P 沟道 MOSFET
- 漏源耐压 Vdss：40V
- 连续漏极电流 Id：3.5A
- 导通电阻 RDS(on)：72mΩ @ Vgs = 10V
- 耗散功率 Pd：1.4W（SOT-23 封装受限）
- 阈值电压 Vgs(th)：1.8V
- 栅极电荷 Qg：13nC @ 10V
- 输入电容 Ciss：536pF；反向传输电容 Crss：36pF；输出电容 Coss：43pF
- 栅极最大电压 Vgs：±20V
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23
- 品牌：MCC（美微科）
三、特性亮点
- 适度耐压（40V）适合汽车及工业低压域内的高侧开关与线路保护；
- RDS(on) 在 Vgs=10V 时为 72mΩ，结合 3.5A 连续电流可满足多数小功率负载；
- 较低的总栅电荷（13nC）与中等输入电容（536pF），有利于降低驱动损耗并实现较快开关；
- SOT-23 小封装便于实施紧凑 PCB 布局，同时提供宽温性能（-55℃~150℃）。
四、典型应用
- 电池供电设备的高侧开关与电源路径选择；
- 便携式设备和通信终端的负载开关与节能管理；
- 逆向电流保护、热插拔开关及简单的 DC-DC 前级开关；
- 小型继电器/电磁阀驱动（配合驱动限流及保护电路）。
五、使用建议与注意事项
- 作为 P 沟道器件，栅极相对于源极需施加负 Vgs 来导通，注意驱动电平及系统电压分配；
- 最大 Vgs 为 ±20V，超限可能损坏栅极氧化层；建议加入栅极电阻及分压或驱动保护电路以抑制瞬态；
- SOT-23 封装热阻较大，Pd 受限，建议在较大电流或持续耗散场合扩展铜箔散热或选用更大封装；
- 在感性负载应用中配合肖特基或 TVS 二极管以抑制反向尖峰，保护 Crss 和栅极。
SI2319-TP 以其小体积、适中的导通损耗与良好的开关性能，适合需要紧凑布局且对开关速度与功耗有平衡要求的中低功率电源管理方案。请在最终设计前参考厂商完整数据手册以获取详细的 I-V 曲线与温度相关特性。
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