WMSIC Electronic Components

MCC SI2301-TP SI2301

ModelSI2301-TP
PackageSOT-23
BrandMCC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
MCC SI2301-TP
Type
MCC
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
MCC
Electronic Component
SI2301-TP
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.036g
Electronic Component
1
Electronic Component
BM0000283169
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2301-TP 产品概述

SI2301-TP 是一款高性能的 P 沟道增强型MOSFET,专为各种电子应用而设计。这款 MOSFET 采用 SOT-23 封装,具有优良的电气特性和出色的热性能,非常适合在空间有限的应用中使用。

基础参数

SI2301-TP 的关键电气参数如下:

  • 漏源电压 (Vdss): 该器件的最大漏源电压为 20V,使其在多种电源管理和开关应用中适用。
  • 连续漏极电流 (Id): 在25°C 环境下,SI2301-TP 的最大连续漏极电流为 2.8A,确保其在负载变化和瞬态电流条件下仍然保持良好的稳定性。
  • 栅源极阈值电压 (Vgs(th)): 该器件具有最小栅源极阈值电压为 450mV,有利于实现低电压驱动,从而提高整体电路的效率。
  • 漏源导通电阻 (Rds(On)): 在 2.8A 和 4.5V 的条件下,其漏源导通电阻为 120mΩ,低 Rds(On) 使其在导通时能有效降低功率损耗。
  • 最大功率耗散: SI2301-TP 的最大功率耗散为 1.25W,适用于中等功率的开关应用。
  • 工作温度范围: 器件的工作温度范畴为 -55°C 到 150°C,确保在极端环境下也能稳定工作。

应用领域

由于其优越的性能参数,SI2301-TP 广泛应用于以下领域:

  1. 电源管理: 适用于 DC-DC 转换器、开关电源和功率调节电路。
  2. 电机驱动: 可用于电机驱动电路中,提供高效的开关控制。
  3. LED 驱动: 在高效LED照明系统中,作为开关元件,以实现低功率损耗。
  4. 负载开关: SI2301-TP 可以用作功率开关,控制负载的通断。
  5. 汽车电子: 在车载电子设备中可用作开关元件,满足较高的工作温度要求。

性能特点

  • 高效能: 低导通电阻与高电流能力结合,极大降低了能量损耗。
  • 优秀的热性能: 封装设计允许器件在高温环境下安全运行,适应各类工业和汽车应用。
  • 小型化设计: SOT-23 封装适合于空间受限的应用,如移动设备和紧凑型电源模块。
  • 简单的驱动要求: 适合低电平信号直接驱动,降低了外围电路的复杂度。

封装与安装

SI2301-TP 采用 SOT-23 封装,这种表面贴装型设计提供了良好的可焊性和机械稳定性。对于需要高密度布局的电路板,SOT-23 封装的优点在于其较小的占地面积及简单的布线要求。

总结

SI2301-TP 是一款功能强大且多功能的 P 沟道 MOSFET,能够在较高温度和电压条件下稳定工作,并支持高达 2.8A 的连续漏极电流,广泛应用于电源管理、电机控制及其他高效能的开关应用中。其低导通电阻和小型化设计使其成为现代电子设计中不可或缺的元件,为工程师提供极大的设计灵活性和性能优势。

总体而言,SI2301-TP 结合了高效性能和实用的设计,使其成为多种应用的理想选择,特别是在对功率、体积及散热有严格要求的应用场合。

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