WMSIC Electronic Components

MCC MMDT3904-TP MMDT3904

ModelMMDT3904-TP
PackageSOT-363
BrandMCC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MCC MMDT3904-TP
Type
MCC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MCC
Electronic Component
MMDT3904-TP
Electronic Component
1
Package
SOT-363
Electronic Component
Transistor(BJT)
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0227091918
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
200mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMDT3904-TP 产品概述

一、产品简介

MMDT3904-TP 是 MCC(美微科)提供的一款双通道 NPN 双极性晶体管阵列,采用紧凑的表面贴装封装 SOT-363(6 引脚)。每通道为标准小信号 NPN 晶体管,具有 40V 的集电极-基极耐压、最高 200mA 的集电极电流能力和 300MHz 的特征频率,适合中频放大与通用开关应用,特别适用于高密度 PCB 设计与便携式电子设备。

二、主要电气参数(典型/最大)

  • 直流电流增益 hFE:100(在 Ic = 10mA、VCE = 1V 测试条件下)
  • 集电极-发射极击穿电压 VCEO:40V
  • 集电极截止电流 Icbo:50nA(典型)
  • 特征频率 fT:300MHz
  • 最大集电极电流 Ic:200mA(单通道瞬态或受限条件)
  • 功耗 Pd:200mW(封装热限制,应按环境温度降额)
  • 集电极饱和电压 VCE(sat):约 300mV(典型,具体测试条件请参见完整数据表)
  • 工作结温范围 Tj:-55℃ ~ +150℃

三、特性与优势

  • 高 hFE:在小信号放大电流区间提供良好增益,有利于前级放大与电平移位电路设计。
  • 较高 fT:300MHz 的特征频率使其在 VHF 及宽带小信号放大器、射频前端和高速切换场合具有良好表现。
  • 双通道阵列:两个 NPN 晶体管集成在一个 SOT-363 包装中,节省 PCB 面积并简化 BOM 管理,利于差分电路或推挽/开集电极配置的实现。
  • 宽温度范围与工业级耐受:-55℃ 至 +150℃,满足工业级应用的可靠性需求。

四、典型应用场景

  • 通用开关、驱动与电平转换
  • 小信号放大器、前置放大、差分放大器
  • 高频/宽带放大(低功率 RF 前端、VHF 应用)
  • 负载检测、信号整形与接口电路(如传感器前端)
  • 高密度便携设备与移动通信终端的离散放大/开关单元

五、封装与装配建议

MMDT3904-TP 使用 SOT-363 封装(微小型 6 引脚),利于自动化贴装与回流焊工艺。由于单通道额定功耗 Pd = 200mW,设计时应考虑封装的热阻和板上散热路径:

  • 合理布局散热铜箔,必要时在底层使用大面积接地/散热平面。
  • 在高环境温度或连续高功耗工况下按器件数据表的温度降额曲线选择安全工作点。
  • 推荐使用符合业界回流曲线的焊接工艺,避免过长或过高的回流温度以确保长期可靠性。

六、设计注意事项

  • VCE(sat) 与开关速度受基极驱动条件影响,设计时应根据所需开关特性合理配置基极限流电阻与驱动电流。
  • 在并联使用或高电流应用时需确保每通道的热均匀性与电流分配,否则可能因热失配导致单通道过载。
  • 对于射频应用,需在 PCB 布局中考虑寄生电容与走线阻抗,保持输入/输出走线短且阻抗可控以发挥 300MHz fT 的优势。

七、获取与支持

MMDT3904-TP 由 MCC(美微科)供应,可在常用电子元器件分销渠道采购。为获得完整的电气特性曲线、引脚定义、热阻与典型应用电路,建议下载并参考 MCC 官方数据手册,或联系技术支持获取封装图与推荐的 PCB 布局示意。

如需基于本器件的电路方案(偏置、电平转换或射频前端设计)示例,可提供具体应用场景与工作条件,我将协助给出可行的电路建议与参数计算。

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