WMSIC Electronic Components

MDD MMBT5551

ModelMMBT5551
PackageSOT-23
BrandMDD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MDD MMBT5551
Type
MDD
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MDD
Electronic Component
MMBT5551
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0225727511
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT5551 产品概述

概要

MMBT5551 是一种高性能的 NPN 双极晶体管(BJT),由 MDD 品牌生产,采用 SOT-23 封装。该器件以其优秀的电气特性和广泛的应用场景而闻名,特别适用于各种电子设备中的放大和开关应用。

基础参数

  • 功率(Pd): 300 mW
    • 这表明该三极管在正常工作条件下可以承受的最大功率。
  • 商品分类: 三极管(BJT)
    • 属于双极晶体管家族,具有良好的电流放大和开关性能。
  • 工作温度: -55℃ ~ +150℃
    • 宽泛的工作温度范围,使其适用于各种环境条件下的应用。
  • 晶体管类型: NPN
    • NPN 结构意味着在基极上施加正电压时,集电极和发射极之间会形成电流路径。
  • 特征频率(fT): 300 MHz
    • 高特征频率表明该器件在高频应用中具有良好的性能。
  • 直流电流增益(hFE@Ic,Vce): 80 @ 1 mA, 5 V
    • 这个参数表示基极电流与集电极电流之间的倍增关系,在给定条件下(Ic = 1 mA,Vce = 5 V)达到80倍。
  • 集射极击穿电压(Vceo): 160 V
    • 表示当基极不接地时,集电极和发射极之间可以承受的最大电压。
  • 集电极-发射极饱和电压(VCE(sat)@Ic,Ib): 150 mV @ 10 mA, 1 mA
    • 在饱和状态下,集电极与发射极之间的电压降低到150 mV(Ic = 10 mA,Ib = 1 mA)。
  • 集电极截止电流(Icbo): 50 nA
    • 当基极不接地时,集电极截止状态下的漏电流非常小。
  • 集电极电流(Ic): 600 mA
    • 最大允许的连续集电极电流,确保器件在正常操作范围内。

应用场景

MMBT5551 因其优异的性能和小巧的 SOT-23 封装,广泛应用于以下领域:

  1. 信号放大

    • 由于其高特征频率和良好的直流电流增益,MMBT5551 非常适合用于音频和射频信号的放大。
  2. 开关应用

    • 低饱和电压和快速切换时间使其成为高效开关元件,常用于数字逻辑电路、驱动器和控制器中。
  3. 汽车电子

    • 宽泛的工作温度范围使其特别适用于汽车电子系统中的各种应用,如传感器、控制单元等。
  4. 工业控制

    • 在工业控制系统中,MMBT5551 可以用于驱动继电器、马达或其他负载设备。
  5. 消费电子

    • 小型化的 SOT-23 封装使其成为移动设备、家用电器等消费电子产品中的理想选择。

优势

  • 高频性能

    • 高达300 MHz 的特征频率,使其在高频应用中表现出色。
  • 低噪声

    • 低截止电流和低饱和电压确保了低噪声操作,提高了系统整体性能。
  • 小型化封装

    • SOT-23 封装节省空间,适合现代电子产品对小型化设计的需求。
  • 宽温范围

    • 从 -55℃ 到 +150℃ 的工作温度范围,使其能够在各种环境条件下可靠运行。

使用注意事项

  • 热管理

    • 尽管器件具有300 mW 的最大功率,但仍需要确保良好的散热措施,以避免过热导致的故障。
  • 电压限制

    • 确保操作电压不超过指定的集射极击穿电压(Vceo),以防止器件损坏。
  • 静电保护

    • 在处理和安装过程中,应采取必要的静电保护措施,以防止静电损伤。

总结

MMBT5551 是一种功能强大且灵活的 NPN 三极管,通过其卓越的电气特性和小巧的 SOT-23 封装,广泛应用于各种电子设备中。其高频性能、低噪声操作和宽温范围,使其成为许多工程师和设计师的首选器件。通过正确使用和管理,这个器件可以为您的项目带来可靠高效的性能。

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