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MDD 1N4007G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD 1N4007G
- Type
- MDD
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- 1N4007G
- Electronic Component
- 1
- Package
- DO-41
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0.227g
- Electronic Component
- 1
- Electronic Component
- BM0226337483
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@1kV
- (Vf)
- 1.1V@1A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N4007G 通用整流二极管 产品概述
一、产品简介
1N4007G 是 MDD 品牌的一款通用整流二极管，采用 DO-41 轴向引线封装，适用于高电压整流与一般功率保护场合。本器件以其高反向耐压（1kV）、1A 额定整流电流以及良好的耐浪涌能力，被广泛用于电源整流、整机保护和各种工业电子设备中。
二、主要电气参数
- 直流反向耐压（Vr）：1000 V（最大）
- 额定整流电流（Io）：1 A（连续）
- 正向压降（Vf）：≈1.1 V @ If = 1 A
- 非重复峰值浪涌电流（Ifsm）：30 A（单次半正弦浪涌，典型按 8.3 ms）
- 反向电流（Ir）：≤5 μA @ Vr = 1 kV
- 工作结温范围：-65 ℃ ~ +150 ℃
三、性能特点与优势
- 高电压能力：1000 V 反向耐压可满足高压整流与保护需求。
- 低泄漏电流：5 μA（@1kV）保证在高压情况下的低能耗与低噪声特性。
- 良好浪涌承受力：30 A 的单次浪涌能力适合启动或突发脉冲能量吸收。
- 宽工作温度范围：-65 ℃ 至 +150 ℃，适用于严苛环境与工业级应用。
- 标准封装：DO-41 轴向封装易于波峰/手工焊接及替换维护。
四、典型应用场景
- 交流整流电路（桥式或半波整流）
- 高压电源与牛电源模块
- 机电设备的反向保护与浪涌抑制
- 工业控制与仪表的电源整流
- 需要高反向耐压的电源滤波与保护回路
五、使用建议与注意事项
- 连续工作电流建议在额定值以下运行并适当考虑温升与散热，长期满载建议加装散热或降低工作电流以延长寿命。
- Ifsm 为非重复峰值浪涌电流，不宜作为重复脉冲设计基准；若有重复浪涌或高频开关环境，应选用专门的浪涌/峰值能力更高的器件或加入限流元件。
- 对于高速开关电源或需低恢复时间的场合，建议使用快速恢复二极管或肖特基二极管以降低开关损耗和电磁干扰。
- 焊接时遵循厂商推荐的焊接工艺与温度曲线，避免长时间过高温度影响封装及电性能。
六、封装与识别
- 封装类型：DO-41（轴向玻璃/环氧封装）
- 引脚标识：管体带色环标示阴极（可见于外观），便于安装识别。
- 适合手工焊接与自动波峰焊接的通用封装，便于制造与维修更换。
总结：1N4007G（MDD，DO-41）以其 1kV 的高耐压、1A 的整流能力与良好的浪涌特性，适合各类需要高压整流与保护的通用应用场景。在设计时注意散热与运行点的合理配置，能在工业与商用产品中提供稳定可靠的整流与保护性能。若需更详细的电气特性曲线或封装尺寸图，建议参考 MDD 官方数据手册。
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