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MDD 2N7002K
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD 2N7002K
- Type
- MDD
- Minimum package
- 3000
Technical parameters
- Electronic Component
- MDD
- Electronic Component
- 2N7002K
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0094738985
- Operating Temperature
- 40℃~+150℃
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 21pF
- Output Capacitor(Coss)
- 9pF
- Resistor(RDS(on))
- 1.9Ω@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：2N7002K MOSFET
一、简介 2N7002K是一款典型的N沟道增强型场效应管（MOSFET），其主要特点包括300mW的功率处理能力、60V的最大漏极-源极电压以及500mA的持续漏极电流。这款MOSFET采用SOT-23封装，具有小型化和高效能等优点，特别适合用于空间要求紧凑的电子电路中。作为MDD品牌下的一款优质元器件，2N7002K广泛应用于开关电源、电机驱动和信号调节等多种场合。
二、技术参数
- 功率耗散(PD)：300mW
- 最大漏极-源极电压(VDS)：60V
- 最大漏极电流(ID)：500mA
- 栅极-源极阈值电压(VGS(th))：通常在2V至4V之间
- 输入电容(CISS)：通常为60pF
- 封装形式：SOT-23
- 工作温度范围：-55°C至+150°C
三、结构和工作原理 2N7002K的基本结构由源极、漏极和栅极组成。其工作原理是基于电场效应的控制机制，电流的导通与截止状态取决于施加在栅极上的电压。当栅极电压高于阈值电压时，N沟道MOSFET的导通状态被激活，漏极与源极之间形成导电通道，使电流通过。相反，若栅极电压低于阈值电压，则导电通道关闭，电流流动被切断。
四、应用领域
- 开关电源：2N7002K适用于开关电源的开关控制部分，能够承受较高的电压和电流，兼具高效率和低功耗特性。
- 电机控制：在小型直流电机的驱动电路中，2N7002K能够很好地实现电机的启停和速度调节，适合用于家电、玩具和机器人等产品。
- 信号开关：能够在各种信号调节电路中用作开关元件，能够有效切换信号通路，广泛应用于无线通信设备和仪表。
- LED驱动：2N7002K也常常用于LED显示和照明系统，作为LED光源的开关控制器，能够实现亮度调节和闪灭效果。
- 线性放大器：在某些小信号放大器电路中，该器件也可以用作线性放大元件，提供一定的增益。
五、优点与特点
- 小型化设计：采用SOT-23封装，使得2N7002K在电路设计上更为紧凑，非常适合现代电子设备中对空间的严格要求。
- 高效率：其较低的导通电阻（RDS(on)）使得其在导通时的功耗较小，从而有效提高整体电路效率。
- 易于驱动：相较于传统的BJT晶体管，MOSFET的栅极输入阻抗较高，需要的驱动电流较小，简化了电路设计。
- 热性能良好：可在较宽的温度范围内稳定工作，适应不同行业的需求。
六、结论 综上所述，2N7002K是一款性能优异、应用广泛的N沟道MOSFET，其在多个领域中都表现出了良好的可靠性和稳定性。其300mW的功率处理能力和60V的极限电压，使其成为许多电子产品中不可或缺的基础元器件。随着电子技术的进步和发展，2N7002K的应用范围预计将持续扩大，为各类产品提供更高的效率和更好的性能。
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