WMSIC Electronic Components

MDD S1M

ModelS1M
PackageSMA(DO-214AC)
BrandMDD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MDD S1M
Type
MDD
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MDD
Electronic Component
S1M
Electronic Component
1
Package
SMA(DO-214AC)
Electronic Component
General Purpose Diode
Electronic Component
0.094g
Electronic Component
1
Electronic Component
BM0226511052
Current
1A
Diode
Electronic Component
Current(Ir)
5uA@1kV
(Vf)
1.1V@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S1M — 通用高压整流二极管(SMA 封装)

一、产品概述

S1M 是一款面向高压整流与通用保护用途的独立式二极管,采用 SMA(DO-214AC)表贴封装,品牌为 MDD。该器件设计用于在中高压环境下提供可靠的单向导电与峰值冲击耐受能力,适合各种电源和工业电路中对高直流耐压与低漏电的需求。器件的工作结温范围为 -55℃ 至 +150℃,能够满足宽温区应用场景的可靠性要求。

二、主要电气参数

  • 型号:S1M
  • 封装:SMA(DO-214AC)表贴
  • 直流整流电流(IF):1 A(连续)
  • 正向压降(Vf):1.1 V @ IF = 1 A
  • 非重复峰值浪涌电流(Ifsm):30 A(单次冲击)
  • 反向直流耐压(VR):1000 V(1 kV)
  • 反向电流(IR):5 μA @ VR = 1 kV
  • 工作结温范围(Tj):-55℃ ~ +150℃
    这些参数表明 S1M 在 1 A 等级的连续整流下具有较低的正向压降,同时在高电压工况下保持低漏电流,适合高压整流和保护应用。

三、封装与热性能

SMA(DO-214AC)封装为常见的表贴型外形,便于自动贴装与批量生产。虽然器件额定连续电流为 1 A,但热管理依赖于 PCB 的铜箔面积和散热结构。在靠近额定电流工作或高环境温度下,建议:

  • 增大焊盘铜面积以降低结-环境温差;
  • 在必要时通过导热孔或底层铜铺接加速散热;
  • 在设计中考虑温度上升并适当留有电流余量。

器件可在 -55℃ 至 +150℃ 的结温范围内工作,但长时间在高结温状态下工作会影响寿命,应避免持续高温运行。

四、典型应用场景

S1M 适用于多种需要高耐压、低漏电流与中等整流能力的场合,包括但不限于:

  • 高压整流电路(单个或并联整流);
  • 工业电源与控制电源的整流与保护;
  • 反向极性保护与电路阻断;
  • 开关电源中非高速整流、续流及保护回路;
  • 测试与测量设备中的高压隔离整流。

需要注意的是,若应用涉及高频高速切换(如高频同步整流),应核实器件的反向恢复时间是否满足要求;S1M 更适合通用整流与保护用途,而非高速功率开关的主整流元件。

五、PCB 布局与焊接建议

为保证器件长期稳定工作,布局与焊接需注意:

  • 采用符合 SMA 封装的焊盘形状与间距,确保良好焊接强度与热传导;
  • 在高电流或高功耗工况下,增加焊盘铜层面积并在靠近焊盘处放置过孔,以利均匀散热;
  • 避免将热源直接布置在二极管上方,保持良好通风;
  • 按照常规回流焊工艺处理,避免超出器件材料耐受温度。若有特殊焊接温度要求,请参照制造商的完整资料或询问供应商。

六、可靠性与测试注意事项

  • 建议在最终产品中进行实际工作电压、峰值冲击与环境温度下的验证测试,尤其是在接近 1 kV 或连续 1 A 的应用场景中;
  • 对于有脉冲冲击的应用,确认 Ifsm(30 A)对应的冲击波形、持续时间与重复频率是否在安全范围内;
  • 长期高温或频繁强浪涌会影响器件寿命,应在设计时预留安全裕度并考虑必要的保护电路(限流、滤波、熔断等)。

七、替代与选型建议

在选型时可将 S1M 与其它 1 A、1 kV 级别的通用整流二极管比较,重点关注正向压降、反向漏电、峰值浪涌能力与封装形式。若需要更低 Vf 或更快恢复特性,可考虑快速恢复(FR)或肖特基(Schottky)系列元件,但要注意这些器件在高压工况下的可用性与漏电特性。S1M 的优势在于高耐压、低反向漏电和 SMA 表贴便于自动化装配。

总结:S1M 为一款面向高压整流与保护的通用二极管,兼顾 1 A 连续整流能力与 1 kV 的反向耐压,在工业电源与高压整流类应用中具有成本与可靠性的平衡优势。选型时应结合热管理与冲击条件进行整体评估。

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