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MDD MDD50N03D
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD MDD50N03D
- Type
- MDD
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- MDD50N03D
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.46g
- Electronic Component
- 1
- Electronic Component
- BM0223547722
- Operating Temperature
- 50℃~+150℃
- Power Dissipation(Pd)
- 28W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 1.015nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MDD50N03D 产品概述
一、基本信息
MDD50N03D是一款高效能的N沟道金属氧化物半导体场效应管（MOSFET），专门设计用于高电流和高电压的应用场合。该器件基于MDD品牌的先进半导体技术，能够提供卓越的开关性能和热性能，极大地满足现代电子设备对功率转换和保护的需求。MDD50N03D的封装形式为TO-252，这种封装方式不仅便于散热，还有助于简化电路设计。
二、重要规格参数
- 导通电阻： 该器件的导通电阻为9mΩ，在10V栅极驱动电压下，这一数值使得MDD50N03D在工作时具有极低的功率损耗，特别适用于要求高效率的应用。
- 耐压： MDD50N03D的最大耐压为30V，能够承受较高的电压，确保在多种应用环境下的稳定性和可靠性。
- 最大漏电流： 该MOSFET能够支持高达50A的漏电流，适合大电流传输的需求，广泛运用于电源管理、驱动电路及其他功率控制应用。
三、应用领域
MDD50N03D的设计使得其在多个领域中表现出色，常见的应用包括但不限于：
开关电源： 在开关电源中，MDD50N03D可以用于实现高效的开关功能，降低能量损耗，提高整体转换效率。
电动机驱动： 该MOSFET能够有效控制电动机的启动、运行和停止，确保电机驱动系统的高效运作。
LED驱动电路： 在LED照明系统中，使用MDD50N03D可以有效管理电流和电压，以实现稳定的光输出。
电池管理系统： 该器件可用于电池充放电管理，保持电池工作在安全和高效的状态下。
四、性能优势
MDD50N03D具备多个性能优势，使得其在当前市场中脱颖而出：
低导通电阻： 9mΩ的导通电阻大幅度减少了能量损耗，从而提升了设备的整体效率。
高电流承载能力：高达50A的漏电流承载能力使MDD50N03D可以有效胜任包括工业设备、消费电子等在内的多种高功率应用。
宽温度范围：MDD50N03D的设计确保其在各种工作环境中都能稳定运行，即使在高温或低温条件下也不易发生性能衰退。
良好的热性能：TO-252封装设计同样注重散热性能，在高功率应用中能够有效降低元器件温升，而不影响工作稳定性。
五、总结
MDD50N03D是一款功能齐全、性能卓越的N沟道MOSFET，凭借其低导通电阻、高耐压和高电流承载特性，广泛应用于开关电源、电动机驱动、LED照明及电池管理等领域。无论是在工业还是消费电子产品中，MDD50N03D均能够提供优越的电气性能和可靠性，为现代电子技术的发展提供了强大的助力。对于需要高效能和稳定性的电子工程师和设计师而言，MDD50N03D无疑是一个值得推荐的解决方案。
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