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MDD SMBJ26A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD SMBJ26A
- Type
- MDD
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- SMBJ26A
- Electronic Component
- 1
- Package
- SMB(DO-214AA)
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.224g
- Electronic Component
- 1
- Electronic Component
- BM0229465203
- Operating Temperature
- 65℃~+150℃
- Voltage
- 42.1V
- Current(Ir)
- 1uA
- Voltage(VBR)
- 31.9V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMBJ26A（SMB DO-214AA）TVS二极管 产品概述
一、产品简介
SMBJ26A 是一颗单向瞬态电压抑制（TVS）二极管，封装为 SMB（DO-214AA），由 MDD 品牌提供。该器件针对工业级瞬态浪涌、雷击和开关瞬态保护设计，适用于26V工作电压等级的电源与信号线保护，具有高能量吸收能力与宽工作温度范围，适合苛刻环境下长期可靠运行。
二、主要参数
- 类型：TVS，单向
- 反向截止电压（Vrwm）：26V
- 击穿电压（Vbr，典型）：31.9V
- 钳位电压（Vc，at Ipp）：42.1V
- 峰值脉冲功率（Ppp）：600W @ 10/1000µs
- 峰值脉冲电流（Ipp）：14.3A
- 反向电流（Ir）：1µA（在 Vrwm 下）
- 工作温度：-65℃ ~ +150℃
- 封装：SMB (DO-214AA)
- 品牌：MDD
三、特性与优势
- 高能量吸收：600W（10/1000µs）级别，对工业雷击与电网感应浪涌有良好缓冲能力。
- 低泄漏电流：Vrwm 条件下 Ir 约为1µA，有利于低功耗系统的长期稳定性。
- 宽温度范围：-65℃~+150℃，适用于车用、工业控制及通信基站等环境。
- 单向结构：针对直流供电/单向浪涌场景，响应速度快，钳位电压可控。
四、典型应用场景
- 24V/26V 电源母线和保护电路；
- 工业控制设备、PLC、电机驱动器的输入端防护；
- 通信设备、基站电源与外围接口的浪涌抑制；
- 电源模块、充电设备及配电系统中的浪涌与反向保护。
五、选型与使用建议
- 确认系统工作电压与 Vrwm 匹配，SMBJ26A 适用于最大持续反向电压约26V 的应用；
- 钳位电压 42.1V 为在指定 Ipp 条件下的典型值，设计时需留意被保护元件的承受电压；
- 布局上应将 TVS 放尽可能靠近受保护端口，缩短接地回路与引线长度以降低感性耦合；
- 对于反复或更高能量的冲击场合，考虑并联冗余或选用更高能量等级器件；
- 温升与功率耗散需通过PCB铜箔面积与散热设计来控制，长脉冲能量下注意器件热应力。
六、封装与可靠性
SMB（DO-214AA）封装兼顾能量能力与可焊接性，适用于波峰/回流焊工艺。器件按工业标准进行高温、高湿、浪涌与热冲击测试，推荐在可靠性要求较高的应用中遵循厂商数据手册的应力限制和存储、焊接规范。
如需型号替代或更多电气/浪涌曲线、封装尺寸与焊接建议，请提供具体应用场景与浪涌工况以便进一步确认。
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