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MDD UM10B
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD UM10B
- Type
- MDD
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- UM10B
- Electronic Component
- 1
- Package
- UMB
- Type
- Electronic Component
- Electronic Component
- Bridge Rectifier
- Electronic Component
- 0.114g
- Electronic Component
- 1
- Electronic Component
- BM0258755384
- Current
- 1A
- Current(Ir)
- 5uA@1kV
- (Vf)
- 1.1V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
UM10B 产品概述
UM10B 是 MDD 品牌的一款单相整流桥，针对高耐压、小体积、低漏电流场合设计。该器件以 1kV 的直流反向耐压和微安级反向电流为核心特点，兼顾 1A 的整流能力与良好的浪涌承受力，适用于高压电源、测试仪器、工业控制等领域的直流整流应用。
一、性能亮点
- 高耐压：直流反向耐压 Vr = 1kV，适合高压二次整流或隔离电源末端整流。
- 低漏电：反向电流 Ir = 5 μA @ 1kV，减少高压小电流系统的泄漏误差。
- 稳定整流能力：额定整流电流 1A，非重复峰值浪涌电流 Ifsm = 35A，能承受较大浪涌冲击。
- 低压降：典型正向压降 Vf ≈ 1.1V @ 1A，降低导通损耗与发热。
二、主要电气参数
- 型号：UM10B（MDD）
- 类型：单相桥式整流
- 正向压降：1.1V @ 1A（典型值）
- 直流反向耐压：1kV
- 直流整流电流：1A
- 反向电流：5 μA @ 1kV
- 非重复峰值浪涌电流（Ifsm）：35A
- 工作结温范围：-55 ℃ ～ +150 ℃
- 封装：UMB
三、热管理与可靠性
在额定电流下，桥式整流工作时会产生一定功耗（单次导通路径通常包含两只二极管）。以 Vf = 1.1V、I = 1A 计算，整流桥整体压降约 2.2V，功耗约 2.2W。建议在设计时：
- 采用较大铜箔散热区或在 PCB 下方扩展散热面积极大化热流散出；
- 保持良好通风或必要时使用风冷/金属散热片；
- 在高温环境或长时间连续工作时，评估结温增长并预留热裕量。
四、封装与安装建议
UMB 封装体积小，利于 PCB 直插或表面贴装。针对高压应用应注意：
- 保持足够的爬电距离与间隙，防止高压击穿或漏电；
- 引脚焊盘应保证良好导热连接；
- 若板上多器件并列，应按热仿真结果布置，避免热耦合集中。
五、典型应用场景
- 高压小功率直流电源与滤波整流
- 仪器仪表高压隔离二次整流
- 安防、计量与传感器的高压供电单元
- 需要低漏电和耐冲击能力的工业控制电路
六、选型要点与注意事项
- 若系统工作电流长时间接近 1A，需重点评估散热方案；若间歇脉冲或瞬态浪涌为主，应关注 Ifsm 能力。
- 高压应用时，除了器件 Vr，PCB 材料和涂覆、电气间距同样关键，按所需安规标准设计。
- 若对正向压降有更严格要求，可考虑低压降肖特基，但肖特基在高压下漏电通常更大，需权衡。
七、订购与资料
型号：UM10B，品牌：MDD，封装：UMB。订购时请确认批次与规格一致，并索取器件的详细数据手册（Electrical Characteristics、Thermal Resistance 和封装尺寸图）以便完成可靠的电路设计与热分析。
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