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MDD GBU1010
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD GBU1010
- Type
- MDD
- Minimum package
- 500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- GBU1010
- Electronic Component
- 1
- Package
- GBU
- Type
- Electronic Component
- Electronic Component
- Bridge Rectifier
- Electronic Component
- 4.106g
- Electronic Component
- 1
- Electronic Component
- BM0229465235
- Current
- 10A
- Current(Ir)
- 10uA@1kV
- (Vf)
- 1.1V@5A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GBU1010 产品概述
一、主要参数概览
GBU1010 为 MDD 品牌单相整流桥，典型电气参数如下：正向压降 Vf = 1.1V（@5A）、额定整流电流 Io = 10A、直流反向耐压 Vr = 1kV、反向漏电流 Ir = 10μA（@1kV）、非重复峰值浪涌电流 Ifsm = 200A、工作结温范围 -55℃～+150℃。封装形式为 GBU 桥式封装，适用于高电压单相整流场合。
二、封装与结构特点
GBU 系列桥式封装将四只二极管集成在单一外壳中，便于安装与焊接，典型为平面引脚和底部散热面设计。GBU1010 的封装有利于板端或散热片固定，适合需要较大散热能力的电力电子应用。
三、电气性能与热管理
工作时桥内有两只二极管串联导通，按标称 Vf 计算：在 5A 条件下，单只 Vf≈1.1V，则两只总压降约 2.2V，对应功耗约 11W（P=2×Vf×I）。因此在 5A 或更高电流下必须做好散热管理；10A 连续整流时压降会更高，须按实际曲线和温升进行保守设计。建议配合散热片、良好铜箔散热和必要的热界面材料，保证结温在安全范围内并留有余量。
四、浪涌能力与稳定性
Ifsm=200A（典型以 8.3ms 半波测试），可承受启动和短时浪涌电流，但为保证长期可靠性，建议限制重复浪涌并在设计中加入限流或软启动措施。反向漏电流仅 10μA@1kV，适合高压直流整流场景，漏电导致的额外发热和系统误动作均较小。
五、典型应用场景
适用于：高压直流电源、实验室电源、工业电源整流、电子变压器整流、电镀/电解设备的高压整流、HV 测试设备，以及要求低漏电、高耐压的单相整流场合。因其高 Vr 特性，也常用于高压整流模块或前端整流器。
六、使用建议与注意事项
- 散热：按典型功耗计算并选择合适散热片与导热路径，必要时进行热仿真。
- 选型：若长期满载运行，建议留有电流和温度余量，或选择更高电流等级器件。
- 冲击保护：在可能出现重复浪涌或短路条件下，配合熔断器、NTC 限流或软启动电路保护。
- PCB 布局：高压端保持足够爬电距离与绝缘，散热铜面积尽量扩大并加热孔或热导垫。
- 存储与焊接：遵循厂家湿热和回流焊规范，避免潮湿引起封装问题。
七、可靠性与采购信息
GBU1010 属于成熟的桥式整流器件，工作温度范围广、漏电小、耐压高，适合长期工业应用。采购时注意向供应商核实完整数据手册、包装形式与出厂测试条件，确认 Ifsm 的测试脉宽及 Vf 测试点，以便在系统设计中准确热估算。若需替代，可寻找同等 Vr（1kV）、Io（≥10A）、低 Ir 的 GBU 系列型号并比对 Vf/Ifsm 规格。
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