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MDD SS5200C
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MDD SS5200C
- Type
- MDD
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MDD
- Electronic Component
- SS5200C
- Electronic Component
- 1
- Package
- SMC(DO-214AB)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.335g
- Electronic Component
- 1
- Electronic Component
- BM0230596315
- Current
- 5A
- Diode
- Electronic Component
- Current(Ir)
- 1mA@200V
- (Vf)
- 850mV@5A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS5200C 产品概述
一、产品简介
SS5200C 为 MDD 品牌的肖特基整流二极管，采用 SMC (DO-214AB) 封装，面向中高压中大电流整流应用。器件设计以低正向压降和快速响应为目标，适合开关电源、整流与保护电路等要求效率与可靠性的场合。
二、主要电气参数
- 正向压降 (Vf)：约 850mV @ 5A（产品资料中亦见 950mV@5A 的标注，请按具体出厂数据表为准）
- 直流反向耐压 (Vr)：200V
- 连续整流电流 (If)：5A
- 反向漏电流 (Ir)：1mA @ 200V（高压下漏电需随温度增大）
- 非重复峰值浪涌电流 (Ifsm)：150A
- 工作结温范围：-55℃ ~ +150℃
三、关键特性与优势
- 低正向压降：在 5A 工作点可显著降低导通损耗，提高转换效率。
- 高耐压等级：200V 反向耐压满足多数中高压开关电源与整流场合。
- 封装散热友好：SMC/DO-214AB 提供较大的焊盘面积，便于 PCB 铜箔散热与热阻管理。
- 良好浪涌能力：150A 的单次浪涌能力可应对启动或短时过载脉冲。
- 快速响应、无显著反向恢复：肖特基特性减少开关损耗与 EMI。
四、典型应用场景
- 开关电源输出或回路整流（SMPS 输出二极管、同步替代）
- 自由轮回二极管、反并联整流
- 电池充电器、适配器、车载电子（非严苛高温泄漏场合）
- 逆变器与光伏逆变系统中的整流与保护回路
五、热管理与可靠性要点
- 由于 Ir 随温度上升显著增大，需在高温环境下评估漏电对系统的影响。
- 建议在 PCB 上提供充足铜箔面积和散热过孔，必要时并联多只器件或考虑更低 Vf 的方案以分摊热负荷。
- 焊接与回流工艺应遵循封装耐温要求，避免超出材料规范导致可靠性下降。
六、选型建议与注意事项
- 若系统工作在高结温或高反向电压条件，重点关注漏电流随温升的曲线；对漏电敏感的应用应选择漏电更低或加冷却措施的型号。
- 正向压降对效率影响显著，长期大电流应用时优先参考器件在目标电流与温度下的 Vf 曲线。
- 浪涌电流能力仅为非重复峰值，频繁的冲击需通过设计降载或更高 Ifsm 等级器件处理。
本概述基于给定参数汇总，实际设计请参照厂商最新数据手册进行详尽电气与热仿真验证。
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