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MSKSEMI MSESD5Z5.0C
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MSKSEMI MSESD5Z5.0C
- Type
- MSKSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MSKSEMI
- Electronic Component
- MSESD5Z5.0C
- Electronic Component
- 1
- Package
- SOD-523
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 15pF
- Electronic Component
- BM0226526848
- Voltage
- 15V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-2
- Current(Ir)
- 1uA
- Voltage(VBR)
- 9V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MSESD5Z5.0C 产品概述
一、产品简介
MSESD5Z5.0C 是美森科（MSKSEMI）推出的一款单路瞬态电压抑制保护器件，类型为 ESD 保护二极管（保护器件 5C）。器件采用超小型 SOD-523 封装，专为对 5V 工作电压线路提供高效的静电放电与脉冲浪涌保护而设计，兼顾体积、响应速度与信号完整性。
二、主要性能参数
- 钳位电压（Vc）：15V（在脉冲条件下）
- 击穿电压（Vbr）：9V
- 反向截止电压（Vrwm）：5V（推荐工作电压）
- 峰值脉冲功率（Ppp）：105W（8/20μs）
- 峰值脉冲电流（Ipp）：7A（8/20μs）
- 结电容（Cj）：15pF
- 反向电流（Ir）：≤1μA
- 通道数：单路
- 防护等级：符合 IEC 61000-4-2（ESD）与 IEC 61000-4-4（EFT）标准
三、关键特性与优势
- 高能量吸收：在 8/20μs 测试波形下可承受高达 105W 的脉冲功率和 7A 峰值电流，能有效钳制瞬态过电压，保护后端电路。
- 低漏电流：反向漏电仅 1μA，适合对静态功耗敏感的系统。
- 低结电容：典型 15pF，能在保证保护效果的同时尽量减小对高速信号的影响，适用于一般高速接口的保护需求。
- 小型封装：SOD-523 占板面积小，适合移动设备与空间受限的 PCB 设计。
- 标准兼容：满足 IEC 61000-4-2/4 等电磁兼容规范，便于产品通过 EMC 认证。
四、典型应用场景
- USB、UART、RS-232/485 等 5V 及信号接口的输入/输出保护
- 手机、平板、笔记本等便携式终端的外部 I/O 保护
- 摄像头模组、传感器接口、物联网（IoT）终端等空间受限场合
- 工业控制与测量设备的信号线防护（需根据现场浪涌等级选型）
五、安装与使用建议
- 建议将器件尽可能靠近被保护的接口或连接器放置，缩短沿线路经并减小寄生电感与电阻，以提高保护效率。
- 对于差分高速信号线，需评估 15pF 的电容对信号完整性的影响，必要时在 PCB 设计上采用合适的阻抗匹配与走线布局。
- SOD-523 为小型封装，焊接时注意温度曲线与回流规范，避免过热影响可靠性。
- 在设计过热或高能环境时，应评估整机散热与多次脉冲情况下的累积应力。
六、封装与订购信息
- 品牌：MSKSEMI（美森科）
- 型号：MSESD5Z5.0C
- 封装：SOD-523（单路）
- 描述：ESD 保护器件，适用于 5V 工作电压线路
- 如需样品或大批量采购，请提供应用场景与预期浪涌等级，以便选型及提供相应的测试报告和封装管脚图。
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