WMSIC Electronic Components

MSKSEMI AP2112K-3.3TRG1(MS) AP2112K

ModelAP2112K-3.3TRG1(MS)
PackageSOT-23-5
BrandMSKSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MSKSEMI AP2112K-3.3TRG1(MS)
Type
MSKSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
320mV@(600mA)
Electronic Component
MSKSEMI
Electronic Component
AP2112K-3.3TRG1(MS)
Electronic Component
1
Package
SOT-23-5
Electronic Component
Linear Regulator(LDO)
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0257677015
Operating Temperature
40℃~+125℃@(Tj)
Operating Voltage
6V
Output
Electronic Component
Output Voltage
3.3V
Output Current
600mA
Output Type
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AP2112K-3.3TRG1(MS) 产品概述

一、产品简介

AP2112K-3.3TRG1(MS) 是美森科(MSKSEMI)一款固定输出、低压差线性稳压器(LDO),输出电压为 3.3V,单通道输出并采用 SOT-23-5 小封装,专为便携与空间受限的应用设计。器件在最高 600mA 输出电流下仍能保持极低压差与优异的电源噪声抑制(PSRR),并集成过流保护、使能控制与过热保护,适合对供电质量和可靠性有较高要求的系统。

二、主要电气参数

  • 输出类型:固定(3.3V)
  • 工作电压(最大输入电压):6V
  • 最大输出电流:600mA
  • 压差(Dropout):320mV @ 600mA
  • 静态电流(Iq):典型 2µA(待机/轻负载下低功耗)
  • PSRR:75dB @ 1kHz(优秀的低频噪声抑制能力)
  • 保护功能:过流保护(OCP)、过热保护(OTP)
  • 引脚控制:使能(EN)功能,可外部软关断
  • 输出极性:正极
  • 输出通道数:1
  • 工作结温范围:-40℃ ~ +125℃ (Tj)
  • 封装:SOT-23-5

三、核心特性与优势

  • 低压差:在满载 600mA 时仅约 320mV 的压差,可在输入电压接近输出电压场景下保持稳定输出,适用于电池供电或低压差要求的系统。
  • 低静态电流:2µA 的静态电流在待机或休眠模式下有助于延长电池续航。
  • 高 PSRR:75dB@1kHz 对模拟电路、RF 前端或音频电路的电源噪声抑制尤为重要,能降低敏感电路的干扰和噪声底。
  • 多重保护:内置过流与过热保护,提升系统安全性并简化外围保护电路设计。
  • 使能控制:EN 引脚支持外部逻辑控制,便于系统电源管理和节能设计。

四、典型应用场景

  • 便携式电池供电设备(手持终端、可穿戴设备)
  • 嵌入式系统与单片机供电
  • 传感器前端、模拟电路和精密参考电源
  • 无线模块、蓝牙/Wi‑Fi 设备的局部 LDO 供电
  • 工业控制与汽车电子(工作温度范围宽,需按系统热设计)

五、典型应用电路与推荐外围

建议的最简应用电路包括输入去耦电容、输出稳定电容与使能控制:

  • VIN → CIN → AP2112K VIN
  • GND → AP2112K GND
  • VOUT → COUT → GND
  • EN 可由 MCU GPIO 或拉高至 VIN 以使能器件

推荐外围元件:

  • 输入电容 CIN:1µF~4.7µF 陶瓷(X5R/X7R),靠近 VIN 引脚放置
  • 输出电容 COUT:2.2µF~10µF 陶瓷(X5R/X7R),放置在 VOUT 与 GND 引脚附近以确保稳定性
  • 若系统对启动浪涌或瞬态有更高要求,可在输入端加大电容或增加串联阻尼元件

注意:Ceramic 电容 ESR 较低,通常对该类 LDO 有利;请根据实际数据手册确认具体最小/最大 ESR 要求以保证稳定性。

六、热设计与稳定性考量

  • 功耗估算:Pd = (VIN - VOUT) × IOUT。举例在 VIN = 6.0V,VOUT = 3.3V,IOUT = 600mA 时,Pd ≈ 2.7V × 0.6A = 1.62W。此功耗在 SOT-23-5 封装上会导致较高结温,需通过 PCB 铜箔散热、铺地或热沉以及限制最大持续输出电流来控制结温。
  • 布局建议:VIN、VOUT 和 GND 引脚附近的走线尽可能短且宽;输出电容和输入电容应紧靠相应引脚并接地回流良好;在 GND 下采用完整地平面并在封装下方铺铜以提升散热能力,必要时添加热通孔(thermal vias)。
  • 保护与可靠性:在高环境温度或持续大电流工况下,器件可能进入热限流或热关断循环,建议在设计时考虑平均功耗与散热裕量。

七、设计建议与注意事项

  • 确保输入电压始终高于 VOUT + Dropout(在最大负载下);若供电接近临界值,应评估负载和温度带来的压降变化。
  • 在使能控制时,EN 引脚电平定义应参考器件数据手册,避免在模糊电平区间频繁切换导致异常工作。
  • 对于敏感模拟或 RF 应用,利用 LDO 的高 PSRR 布局上应尽量将噪声敏感节点与开关噪声源分离,并增加必要的滤波元件。
  • 长期在高温或满载条件下工作时,请评估封装热阻并考虑扩展散热措施,必要时降低连续输出电流或选择更大功率封装。

总结:AP2112K-3.3TRG1(MS) 是一款针对低压差、高 PSRR 和低静态电流需求的 3.3V LDO,适合便携、模拟与噪声敏感系统。合理的外部电容选择与 PCB 热布局是发挥其性能的关键。若用于高功耗场景,请按功耗计算与封装热阻进行充分的热设计。

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