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MSKSEMI RB521S30T1G(MS) RB521S30T1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MSKSEMI RB521S30T1G(MS)
- Type
- MSKSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MSKSEMI
- Electronic Component
- RB521S30T1G(MS)
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0264464050
- Current
- 200mA
- Diode
- 1
- Current(Ir)
- 30uA@10V
- (Vf)
- 500mV@200mA
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RB521S30T1G(MS) 产品概述
一、概述
RB521S30T1G(MS) 是美森科（MSKSEMI）推出的一款小型肖特基整流二极管，采用 SOD-523 封装。器件具有低正向压降、较高的平均整流能力和一定的浪涌承受能力，适合空间受限且需高效开关或电压钳位的场景，如便携式电源管理、DC‑DC 转换和电池保护电路等。
二、主要电气参数
- 正向压降（Vf）：约 500 mV @ 200 mA
- 平均整流电流（Io）：200 mA
- 直流反向耐压（Vr）：30 V
- 反向漏电流（Ir）：30 μA @ 10 V
- 非重复峰值浪涌电流（Ifsm）：1 A
- 工作结温范围：-55 ℃ ~ +125 ℃
- 封装：SOD-523（极小型贴片）
三、关键特性与优势
- 低正向压降：在中小电流工作点可显著降低导通损耗，提高效率，尤其适合低电压轨供电。
- 小体积封装：SOD-523 极小占板，方便高密度 PCB 布局和便携式产品使用。
- 良好的浪涌能力：1 A 峰值浪涌能力，能抵抗短时突发电流冲击，提高可靠性。
- 宽温工作范围：-55 ℃ 至 +125 ℃，适用于工业级及消费电子的温度要求。
四、典型应用
- DC‑DC 转换器输出整流或回流保护
- 锂电池保护与充放电防反接电路
- 电压钳位与反向电压保护（输入端保护）
- 便携式电子设备、移动电源及充电器的低压整流或钳位场合
五、设计与封装注意事项
- PCB 布局：由于封装体积极小，应保证焊盘和走线的热量分布合理，以利于回流焊接和散热。推荐遵循厂家提供的 SOD‑523 焊盘尺寸。
- 热管理：尽管平均整流电流为 200 mA，但长期工作在高电流或高结温下应采取降额设计（例如降低工作电流或增加散热路径）。
- 浪涌与保护：峰值浪涌能力有限，若存在较大启动或故障浪涌，应在系统层面增加限流或软启动措施。
- 焊接工艺：遵循器件制造商的回流曲线和 ESD 防护规范，避免超出温度或长期高温暴露导致可靠性下降。
六、可靠性与采购信息
- 品牌：MSKSEMI（美森科）
- 型号：RB521S30T1G(MS)；封装：SOD‑523。
- 推荐在批量设计中进行样品验证，包括温升、漏电和长期稳定性测试。采购时注意核对包装、批号与出厂测试报告，确保符合应用场景的品质要求。
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