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MSKSEMI BZT52C2V7S
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MSKSEMI BZT52C2V7S
- Type
- MSKSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MSKSEMI
- Electronic Component
- BZT52C2V7S
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- (Zzk)
- 600Ω
- (Zzt)
- 100Ω
- Electronic Component
- BM0226526781
- Diode
- 1
- Current(Ir)
- 20uA@1V
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 2.5V~2.9V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C2V7S 产品概述
一、产品简介
BZT52C2V7S 是 MSKSEMI（美森科）推出的一款独立式小功率硅稳压二极管（Zener），标称稳压值 2.7V，稳压范围 2.5V ~ 2.9V，封装为 SOD-323。该器件适合用作低功耗电压基准、浪涌/过压钳位与简易电源稳压场合。
二、主要电气参数
- 标称稳压：2.7V（范围 2.5V ~ 2.9V）
- 最大耗散功率 Pd：200 mW（封装热限制需按实际焊盘和环境做降额）
- 阻抗：Zzk = 600 Ω（拐点/低电流区）；Zzt = 100 Ω（测试电流/工作区）
- 反向电流 Ir：20 μA @ 1.0 V（随温度和电压上升）
- 配置：独立式（二极管单颗）
- 封装：SOD-323（小型贴片）
三、性能特点与适用场景
- 小体积、低成本，适合空间受限的便携设备与消费电子。
- 2.7V 级稳压适合为小信号电路、基准源、比较器偏置或电平限制提供简单可靠的参考。
- 适用于低能量瞬态钳位与浪涌吸收，但非替代高能量瞬变抑制器（如 TVS）。
四、使用注意与计算示例
- 最大理论电流（不考虑热阻和降额）：Iz_max ≈ Pd / Vz = 0.2 W / 2.7 V ≈ 74 mA；实际连续电流应远小于该值，SOD-323 封装常建议连续工作电流 ≤ 10–20 mA，具体按 PCB 散热能力降额。
- 选用串联电阻 Rs：Rs = (Vin - Vz) / Iz（Iz 为稳压工作电流）。例如 Vin=5V，期望 Iz=5mA，则 Rs ≈ (5−2.7)/0.005 = 460 Ω，功耗 P_Rs = (Vin−Vz)·Iz ≈ 11.5 mW。
- 低电流区到工作区阻抗差异大（Zzk >> Zzt），所以在非常小电流下稳压精度较差，要保证足够的工作电流以获得稳定的 2.7V。
五、封装与工艺建议
- SOD-323 为小型贴片封装，推荐合理的焊盘尺寸和铜箔扩展以改善散热。标准回流焊工艺可接受，但建议遵循制造商的回流曲线并避免过长高温暴露。
- 储存与焊接时注意防潮与静电保护。过高的焊接温度或长时间高温会影响器件可靠性。
六、选型与替代
- 若需要更精确稳压或更高功率，应选择低阻抗或更大功耗封装的稳压器件。
- 常见替代型号有同类 BZT52 系列中 2.7V 标称的其他厂商产品，选型时比对 Pd、阻抗、反向漏电与封装尺寸。
总结：BZT52C2V7S 是一款适合低功耗、空间受限场合的 2.7V 小功率 Zener 二极管，使用时需注意封装热限制与工作电流选择，以保证稳压精度与长期可靠性。若需更严格的电压精度或更大能量吸收能力，应考虑更高规格器件。
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