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MSKSEMI MS400N06HTL
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MSKSEMI MS400N06HTL
- Type
- MSKSEMI
- Minimum package
- 8000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MSKSEMI
- Electronic Component
- MS400N06HTL
- Electronic Component
- 1
- Package
- TOLL-8
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 1.093g
- Electronic Component
- 1
- Electronic Component
- BM0264464067
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 455W
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MS400N06HTL 产品概述
一、概述
MS400N06HTL 为 MSKSEMI（美森科）推出的一款高性能 N 沟道功率场效应管，额定漏源电压 VDSS 60V，连续漏极电流 ID 达 400A。器件采用大电流 TOLL-8 封装，专为高功率、高频率开关场合优化，适配电源转换、储能与计算硬件等对能效与热稳定性要求严格的系统。典型导通电阻 RDS(on) 为 1.2 mΩ（VGS=10V），阈值电压 VGS(th)≈2.9V。
二、关键电气参数
- 漏源电压（VDSS）：60V
- 连续漏极电流（ID）：400A
- 导通电阻（RDS(on)）：1.2 mΩ @ VGS=10V
- 耗散功率（Pd）：455W
- 栅极电压范围（VGS）：±20V，阈值约 2.9V
- 总栅极电荷 Qg：98 nC（驱动能力需求高）
- 输入电容 Ciss：5.93 nF；输出电容 Coss：2.24 nF；反向传输电容 Crss：85 pF
三、热性能与封装
TOLL-8 大电流封装提供优良的导热路径与低电感连接，适合在高瞬态电流与高功率密度场景下工作。器件额定工作温度范围宽（-55℃ 至 +150℃），但在实际设计中应结合 PCB 散热、散热器及风冷/液冷方案进行热仿真与退让，以保证长期可靠性。
四、典型应用
- 开关电源（同步降压/升压）与逆变器
- 储能系统与电池管理功率开关
- 数据中心与服务器电源模块
- 电机驱动与工业大电流开关场景
五、设计与使用建议
- 栅极驱动：尽量采用强驱动器以应对 98 nC 的高 Qg，降低开关损耗与转换损耗。建议合理选用栅极电阻以抑制振铃并控制开关速度。
- PCB 布局：尽量缩短漏极—源极大电流回路，使用多层铜皮与散热过孔以降低寄生电阻与电感。
- 并联使用：并联时需注意封装热阻与电流均流，采用相同长度的走线与共模阻尼措施。
- 保护与退让：不超过 VGS ±20V；考虑瞬态过压、浪涌及 SOA 限制，必要时加入 TVS 与合适的限流保护。
六、优点与注意事项
优点在于极低的导通电阻与大电流承载能力、优良的散热特性及宽温度范围，适合高效率、高功率密度设计。需注意其较高的栅极电荷对驱动器功率的要求以及开关过程中可能引起的电磁干扰与振铃问题，设计时应综合考虑栅极驱动、布线与滤波策略。
七、封装与订购
型号：MS400N06HTL；品牌：MSKSEMI（美森科）；封装：TOLL-8；配置：独立式 N 沟道。具体引脚定义、典型特性曲线及极限参数请参照产品数据手册并与供应商确认样片与批量供货信息。
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