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MSKSEMI MCP6002T-I/SN(MS) MCP6002T
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- MSKSEMI MCP6002T-I / SN(MS)
- Type
- MSKSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- MSKSEMI
- Electronic Component
- MCP6002T-I/SN(MS)
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- Operational Amplifier
- Electronic Component
- 0.182g
- Electronic Component
- 1
- Electronic Component
- Output
- Features
- Built-in
- Electronic Component
- BM0225936530
- Operating Temperature
- 55℃~+125℃
- Amplifier
- 2
- (SR)
- 1.2V/us
- Power Supply Voltage
- 2.1V~5.5V
- Static Current(Iq)
- 50uA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MCP6002T-I/SN(MS) 产品概述
一、产品简介
MCP6002T-I/SN(MS) 是美森科（MSKSEMI）推出的低功耗双通道运算放大器，具有轨到轨输入与轨到轨输出能力，适用于电池供电与低电压系统的精密信号调理。器件强调极低静态电流与低失调、宽共模抑制，适合对能耗与精度有双重要求的便携式与工业应用。
二、主要特性
- 共模抑制比（CMRR）：95 dB（典型）
- 轨到轨输入/输出，提升动态范围与灵活性
- 最大电源电压：VDD–VSS = 5.5 V
- 输入失调电压（Vos）：500 μV（典型）
- 输入偏置电流（Ib）：2 pA；输入失调电流（Ios）：1 pA
- 增益带宽积（GBP）：1.5 MHz；压摆率（SR）：1.2 V/μs
- 静态电流（Iq）：50 μA（双通道）
- 工作电源：单电源 2.1 V ～ 5.5 V；双电源对称范围 ±1.35 V ～ ±2.75 V
- 温度范围：-55 ℃ ～ +125 ℃
- 封装：SOP-8，适合表面贴装工艺
三、电气性能要点
该器件在低功耗条件下提供亚毫伏级的输入失调及极低偏置电流，适合微弱信号放大与高阻抗传感器接口。1.5 MHz 的带宽与 1.2 V/μs 的压摆率，能满足低频到中等带宽的滤波与放大任务，但不适合高速、大电流驱动场合。95 dB 的 CMRR 有利于抑制输入共模干扰，提高测量精度。
四、典型应用
- 便携式数据采集与传感器前端（温度、电流、电压传感）
- 低功耗手持仪器与电池供电系统
- 有源滤波器、积分器与低频放大器
- 工业控制中的模拟信号调理
五、设计与布局建议
- 电源侧应在芯片电源引脚附近放置 0.1 μF 陶瓷旁路电容，减小电源噪声并保证稳定性。
- 对于高阻抗信号源，注意输入保护与漂移补偿；低偏置电流有利于直接驱动高阻抗传感器。
- 在与大电容性负载连接时，评估稳定性，必要时在反馈回路加入小电阻或缓冲级。
- 在高精度测量场合，关注输入失调温漂（~650 nV/℃），必要时采取软件或硬件漂移校准。
六、选型建议
若应用对功耗、轨到轨范围与输入偏置电流有较高要求，且工作频段在低至中等频率范围，该器件为合适选择。对于需要更高带宽或更大驱动能力的场合，应选择规格更高的放大器。封装为 SOP-8，便于批量生产与自动贴片。
总体而言，MCP6002T-I/SN(MS) 提供了在低电源电压下兼顾精度与低功耗的双通道放大解决方案，适合对能耗敏感且需可靠模拟前端的应用。
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