WMSIC Electronic Components

MSKSEMI 1SMA4743A-MS 1SMA4743A

Model1SMA4743A-MS
PackageDO-214AC(SMA)
BrandMSKSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MSKSEMI 1SMA4743A-MS
Type
MSKSEMI
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MSKSEMI
Electronic Component
1SMA4743A-MS
Electronic Component
1
Package
DO-214AC(SMA)
Electronic Component
Zener Diode
Electronic Component
0.097g
Electronic Component
1
(Zzt)
10Ω
Electronic Component
BM0253985073
Diode
1
Current(Ir)
5uA@10V
Power Dissipation(Pd)
1W
Electronic Component
12.4V~14.1V
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

1SMA4743A-MS 产品概述

一、产品简介

1SMA4743A-MS(品牌:MSKSEMI / 美森科)为独立式稳压二极管,封装为 DO-214AC(SMA)。该器件为低功耗表面贴装稳压元件,适用于对中低电流、有限功率条件下的基准稳压或浪涌抑制场合。器件分类为“未分类”,可作为一般用途的13V标称稳压二极管使用。

二、主要电气参数

  • 标称稳压值(Vnom):13V
  • 稳压值允许范围:12.4V ~ 14.1V
  • 反向电流 Ir:5 μA @ 10V
  • 动态阻抗 Zzt:10 Ω
  • 耗散功率 Pd:1 W
  • 工作结温范围 Tj:-55 ℃ ~ +150 ℃

三、性能特点

  • 标称电压接近13V,适合13V轨的局部参考或保护。
  • 低反向泄漏(5 μA@10V),在高阻抗源或分压器电路中可减少误差。
  • 动态阻抗10 Ω,在中小电流范围内提供稳定的电压响应。
  • 1W耗散能力配合SMA封装,便于表面贴装工艺和空间受限的PCB布局。

四、典型应用

  • 13V稳压基准:用于电源辅助电路、检测比较器的参考电压。
  • 浪涌/过压保护:对敏感模块提供限制电压的保护功能(需注意功率限制)。
  • 工业与通信设备中的小功率稳压和电压钳位。
  • 便携仪器、单板电源和测试仪器的局部稳压电路。

五、热与可靠性说明

在1W耗散限制下,应注意器件的热阻和PCB散热能力;SMA封装的散热主要依靠焊盘和底层铜箔,建议增大焊盘铜面积以降低结温。工作结温范围宽(-55 ℃ ~ +150 ℃),适用温度范围广,但在高温或高功率条件下需保证结温不超过极限值以防老化或失效。

六、封装与布局建议

  • 封装:DO-214AC(SMA),适合自动贴装与回流焊工艺。
  • 布局建议:增加焊盘铜层、靠近热源处避免热叠加;为提高稳压精度,可将参考电阻或分压网络布局靠近二极管并采用短回路路径以降低寄生阻抗。

七、选型与使用注意

  • 确定工作电流范围与耗散能力匹配:1W为器件总体耗散额定,若长时间工作在高电流区需评估实际结温。
  • 动态阻抗较大(10 Ω),在对精度要求高的稳压场合应考虑并联或采用低阻抗稳压方案。
  • 反向泄漏虽低,但在高阻抗测量或高阻值偏置环境下仍会产生误差,应在电路中予以校正或补偿。

如果需要器件的完整数据手册(含典型曲线、最大额定值、封装图和推荐焊盘),建议直接联系MSKSEMI或供应商获取原厂规格书以便进行详细设计验证与可靠性评估。

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