WMSIC Electronic Components

MSKSEMI ESD7C3.3DT5G-MS ESD7C3.3DT5G

ModelESD7C3.3DT5G-MS
PackageSOT-723
BrandMSKSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MSKSEMI ESD7C3.3DT5G-MS
Type
MSKSEMI
Minimum package
8000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MSKSEMI
Electronic Component
ESD7C3.3DT5G-MS
Electronic Component
1
Package
SOT-723
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.031g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
12pF;13pF
Electronic Component
BM0230826862
Voltage
3.3V
Electronic Component
IEC 61000-4-2
Current(Ir)
1uA
Voltage(VBR)
5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD7C3.3DT5G-MS 产品概述

一、产品简介

ESD7C3.3DT5G-MS 是 MSKSEMI(美森科)推出的一款双路瞬态抑制二极管(ESD Diode),专为 3.3V 电平接口的静电放电和浪涌保护而设计。器件采用 SOD-123FL 小型封装,集成两路保护通道,兼容 IEC 61000-4-2 静电放电等级要求,适用于消费类电子、移动设备、通讯接口和各种 3.3V 信号线的输入/输出防护。

二、主要技术参数

  • 型号:ESD7C3.3DT5G-MS(品牌:MSKSEMI / 美森科)
  • 类型:ESD 瞬态抑制二极管,双路(双通道)
  • 工作稳态反向电压 Vrwm:3.3 V
  • 钳位电压:3.3 V(标称)
  • 峰值脉冲电流 Ipp:1.5 A(典型)
  • 击穿电压(Vbr):5 V(典型)
  • 反向电流 Ir:1 μA(典型)
  • 结电容 Cj:两路分别约 12 pF、13 pF(典型)
  • 防护等级:符合 IEC 61000-4-2 静电放电规范
  • 封装:SOD-123FL,适用于自动贴片生产

三、产品特点与优势

  • 针对 3.3V 电平优化:Vrwm 与钳位电压标称 3.3V,适合直接保护 3.3V 逻辑与接口,保证正常工作电压下低漏电和可靠防护。
  • 双路集成设计:一颗器件即可保护两路信号,节省 PCB 面积并降低装配成本。
  • 低结电容:12 pF / 13 pF 的结电容级别,适合多数高频信号线和差分对,降低对信号完整性的影响。
  • 小型封装:SOD-123FL 提供较小占板面积且利于热管理与自动化贴装。
  • 符合 IEC 标准:通过 IEC 61000-4-2 的设计考量,能有效缓解静电冲击带来的损伤风险。

四、典型应用场景

  • 3.3V 电平的 I/O 接口保护(GPIO、UART、SPI、I2C 等)
  • 通信接口与数据线防护(USB 子系统外围、串口、音视频信号线等)
  • 移动终端、无线通信设备、路由器和智能硬件的端口防护
  • 工业控制与仪表中对静电和脉冲干扰敏感的信号通道保护

五、设计与布局建议

  • 尽可能将 ESD 器件靠近被保护的连接器或信号入口放置,缩短受保护节点到器件的走线长度以降低串扰和感性耦合。
  • 将器件地端与系统地平面通过短而宽的走线或地vias连接,确保泄放路径低阻抗。
  • 对高速差分信号,如需要,可在布局时评估结电容对阻抗的影响;必要时配合阻抗匹配元件或选择更低 Cj 的保护器件。
  • 在需要时与串联阻抗(如小阻值电阻、共模电感)配合使用,以提升整体浪涌吸收能力和滤波效果。

六、封装与可靠性

SOD-123FL 小型封装利于高密度布局与自动化贴片,封装及焊接工艺应遵循 MSKSEMI 的焊接曲线建议以保证长期可靠性。器件在正常工作条件下具有低漏电和稳定的击穿特性,适合大批量消费类电子应用。

如需详细电气特性曲线、封装尺寸图、推荐焊接工艺或样品与报价信息,请联系 MSKSEMI(美森科)或指定代理商获取完整数据手册与支持。

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