WMSIC Electronic Components

MICRONE MEM2307XG

ModelMEM2307XG
PackageSOT-23
BrandMICRONE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MICRONE MEM2307XG
Type
MICRONE
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MICRONE
Electronic Component
MEM2307XG
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0227695472
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
700pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MEM2307XG 产品概述

一、概述

MEM2307XG 是 MICRONE(南京微盟)推出的一款 P 沟道场效应管(P‑MOSFET),封装为 SOT‑23,面向低电压电源管理与高侧开关应用。器件耐压 30V,连续漏极电流可达 4.1A,适用于便携设备和板载电源开关场合,兼顾导通性能与封装尺寸的折衷。

二、关键参数(典型/标称)

  • 漏源耐压 Vdss:30V
  • 连续漏极电流 Id:4.1A
  • 导通电阻 RDS(on):88 mΩ @ 10V(测量条件见数据表)
  • 阈值电压 Vgs(th):1.3V(典型)
  • 栅极电荷 Qg:14.3 nC @ 4.5V
  • 输入电容 Ciss:700 pF;输出电容 Coss:120 pF;反向传输电容 Crss:75 pF
  • 功耗 Pd(封装相关):约 1.4W(参考值,受 PCB 散热影响较大)
  • 封装:SOT‑23(小体积,适合空间受限的应用)

三、特点与优势

  • 小封装:SOT‑23 适合空间受限的便携式和消费电子产品。
  • 低 RDS(on):在较高栅压下具有较低导通电阻,有利于降低导通损耗。
  • 中等栅极电荷与电容:Qg 与 Ciss 指标处于中等水平,对栅极驱动要求合理,适合开关频率不超高的场景。
  • 适用高侧开关:P 沟道布局便于实现高侧断开控制,减少外部驱动复杂度。

四、典型应用场景

  • 电池/电源高侧开关与负载断电控制
  • 便携式设备(智能终端、电源管理模块)
  • 反接/倒灌保护电路(与限流元件配合)
  • 低中功率开关电源中的备用回路或热插拔控制

五、设计与使用建议

  • 开关连接:P‑MOSFET 源极接入电源正 rail,漏极到负载,高侧控制时门极拉低导通,拉高回到源电位使其关断。
  • 栅极驱动:因 Qg≈14.3 nC(@4.5V)且 Ciss≈700 pF,在需要较快开关时应考虑合适的驱动能力或阻尼网络,避免因充放电时间造成的开关损耗和振铃。
  • 热设计:SOT‑23 的 Pd 受 PCB 铜箔和焊盘影响较大,实际功耗应按 PCB 热阻和环境温度进行热耦合计算并适当降额使用。
  • 布线与去耦:减短功率回路走线以降低寄生电感;在 MOSFET 近侧放置足够的去耦电容以抑制瞬态电压尖峰。
  • 安全余量:实际设计中应查阅完整数据手册以获取最大 Vgs、脉冲电流、热阻等限制,并留有裕量以保证可靠性。

六、选型注意事项

  • 若目标为更高开关频率或更低导通损耗,请同时比较导通电阻在目标 Vgs 下的变化以及总开关损耗(与 Qg、Coss 有关)。
  • 对于更高电流或更严格热管理的场合,应优先考虑更大封装或低 RDS(on) 的器件。
  • 在关键设计中建议参考并测试器件在实际 PCB 和温度条件下的表现,确保满足系统可靠性要求。

如需基于 MEM2307XG 的参考电路、封装引脚图或更详细的温度/电流特性,请提供具体的应用场景与工作条件,我可以进一步给出电路建议与热设计计算。

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