WMSIC Electronic Components

Nexperia 2N7002NXAKR

Nexperia 2N7002NXAKR
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Product image

Model2N7002NXAKR
PackageSOT-23
BrandNexperia
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

19 specifications

Core information

Product name
Nexperia 2N7002NXAKR
Type
NEXPERIA
Minimum package
3000 卷

Technical parameters

Electronic Component
NEXPERIA
Electronic Component
2N7002NXAKR
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.025g
Electronic Component
1
Electronic Component
BM0094299461
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
265mW；1.33W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V
Capacitor(Ciss)
20pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2N7002NXAKR 产品概述

1. 产品简介

2N7002NXAKR 是一款高性能的 N 沟道 MOSFET（场效应管），由 Nexperia USA Inc. 制造。该器件广泛应用于各种电子电路中，尤其是在低功耗、高效率的开关和驱动应用场景下。其优良的特性使得它成为实现高性能电路设计的理想选择。

2. 基本参数

2N7002NXAKR 的主要规格包括：

  • 器件状态：有源
  • FET 类型：N 沟道
  • 技术：MOSFET（金属氧化物）
  • 最大漏源电压（Vdss）：60V
  • 25°C 时电流 - 连续漏极 (Id)：190mA（Ta），300mA（Tc）
  • 驱动电压：5V，10V（对应最大和最小 Rds On）
  • 工作温度范围：-55°C ~ 150°C（TJ）
  • 功率耗散：265mW（Ta），1.33W（Tc）
  • 栅极电压阈值（Vgs(th)）：最大 2.1V @ 250µA
  • 不同 Id、Vgs 时导通电阻（Rds(on)）：最大 4.5Ω @ 100mA，10V
  • 输入电容 (Ciss)：最大 20pF @ 10V
  • 栅极电荷 (Qg)：最大 430pC @ 4.5V

3. 封装和安装

2N7002NXAKR 采用表面贴装型（SMD）封装，具体为高密度的 SOT-23-3 封装形式。该封装使得器件的安装更加方便，适用于现代高集成度的电路设计。在 SOT-23 封装中，器件稳定性强、散热性能好，能够有效保证产品在高工作频率和高温度条件下的可靠性。

4. 应用场景

2N7002NXAKR 的设计使其非常适合以下应用场景：

  • 开关电源：可以作为开关元件使用，实现高效的电能转换。
  • LED 驱动：常用于 LED 照明电路中的驱动，具有低导通损耗。
  • 信号开关：在低功耗信号开关应用中，由于其小的门电荷和低栅电压阈值，能够快速响应。
  • 电机驱动：在小功率直流电机的驱动电路中，用作驱动开关，确保高效运行。
  • 便携电子产品：由于其低功耗特性，适用于便携式电子设备，以延长电池使用寿命。

5. 性能优势

2N7002NXAKR 的优点在于其高效能的工作性能，尤其是在导通电阻（Rds(on)）和较高的漏源电压（Vdss）。其最大 Rds(on) 仅为 4.5Ω，确保器件在导通状态下的功率损耗极小，适合高频率的开关操作。此外，器件的门电荷（Qg）较小，使其在开关状态切换时耗能更少，提升整体效率。

其宽广的工作温度范围为产品在恶劣环境下的应用提供了保障，能够适应更极端的工作条件，满足不同客户的设计需求。

6. 总结

总体来看，2N7002NXAKR 是一款功能强大，性能卓越的 N 沟道 MOSFET，凭借其优良的电气特性和多样的应用场景，成为现代电子设计中不可或缺的元器件之一。 idéale选择将有效提高电子产品的性能和可靠性，满足市场对高效能、低功耗解决方案日益增长的需求。

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