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Nexperia PMZ290UNE2YL
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia PMZ290UNE2YL
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- PMZ290UNE2YL
- Electronic Component
- 1
- Package
- DFN1006-3L
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.009g
- Electronic Component
- 1
- Electronic Component
- BM0010078065
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 715mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：PMZ290UNE2YL N-沟道MOSFET
制造商及品牌
PMZ290UNE2YL由知名半导体制造商Nexperia USA Inc.生产，这是一家专注于提供高品质半导体元件的公司，致力于满足各类电子应用的需求。
产品类型及应用场景
PMZ290UNE2YL是一个N-沟道金属氧化物半导体场效应管（MOSFET），采用表面贴装型（SMD）方案，适用于多种低功耗开关应用。依赖其低导通电阻和高效率，这款组件在电源管理、驱动电路、信号开关和负载开关等领域表现出色。由于其工作温度范围广泛（-55°C至150°C），使得PMZ290UNE2YL特别适用于严酷环境条件下的应用，例如汽车电子、工业自动化以及嵌入式系统等。
技术参数
该MOSFET的主要技术参数如下：
- 额定连续漏极电流（Id）：1.2A（在25°C环境温度下）
- 漏源电压（Vdss）：高达20V，适用于多种低压应用
- 栅源电压（Vgs）：在±8V的范围内工作，确保器件的稳定性和可靠性
- 导通电阻（Rds(on)）：在4.5V的驱动电压下，最大导通电阻为320毫欧，确保高效能的电流传输
- 栅极阈值电压（Vgs(th)）：最大值为950mV（在250µA的漏电流下），可用于精准的开关控制
- 驱动电压：支持1.5V和4.5V的驱动电压，以便满足不同应用需求
- 功耗：最大功耗为350mW（在环境温度下）及5.43W（在结温条件下），使其适合高功率应用
- 栅极电荷（Qg）：在4.5V时最大值为1.4nC，确保在高频开关应用中的快速响应
- 输入电容（Ciss）：在10V下最大值为46pF，适合高速信号处理
封装规格
PMZ290UNE2YL采用SC-101封装，DFN1006-3L尺寸设计，这种紧凑的封装形式使其特别适合空间受限的电路设计。同时，DFN封装具有出色的散热性能，有助于提高器件的可靠性和性能。
工作条件和特性
该器件的工作温度范围为-55°C至150°C，符合高温和低温环境下的使用要求，扩大了它的应用场景。此外，设备在其设计中考虑了现代电子产品的发展趋势，能够满足实时性、稳定性和兼容性的要求。
总结
PMZ290UNE2YL N-沟道MOSFET以其低导通电阻、高效能和广泛的工作温度范围，成为多种电子应用的重要选择。其卓越的性能和温度适应性，使得该器件在各类现代电子设备中均具备出色的表现。无论是在汽车电子、工业控制还是通信设备中，PMZ290UNE2YL均能为设计师提供可靠的解决方案，是高性能、高效能设计的重要组成部分。
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