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Nexperia BSS123,215 BSS123
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Nexperia BSS123, 215
- Type
- NEXPERIA
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NEXPERIA
- Electronic Component
- BSS123,215
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Electronic Component
- BM0000280743
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 250mW
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BSS123,215 N沟道MOSFET
1. 基本信息
BSS123,215是一款高性能的N沟道金属氧化物场效应管（MOSFET），专为便携式和小型电路设计而制造。这款器件具有优良的电气特性和可靠的工作性能，适用于各种电子应用，如开关电源、信号调理和功率管理等。该器件的主要特性包括最大漏源电压（Vdss）为100V，连续漏极电流（Id）为150mA，具备良好的导通电阻和高温稳定性。
2. 关键参数
- 漏源电压（Vdss）: 100V，表示在此电压下器件的安全运行能力，使其适合大多数中低功率应用。
- 连续漏极电流（Id）: 150mA (在25°C时)，这一参数表明该器件能够承载的最大电流，有助于满足一般电流负载需求。
- 栅源极阈值电压: 2.8V @ 1mA，表明此器件在此电压下开始导通，有利于低电平信号控制。
- 漏源导通电阻（Rds On）: 6Ω @ 120mA,10V，低导通电阻帮助减少功耗，提高工作效率。
- 最大功率耗散: 250mW (在25°C)，确保在高温环境下也能正常工作，以满足不同应用场景的需求。
- 工作温度范围: -55°C ~ 150°C，展现了其出色的环境适应性，适用于严苛温度条件的应用。
- 封装: SOT-23，体积小巧且适合表面贴装，便于设计紧凑型电路板。
3. 应用场景
BSS123,215 N沟道MOSFET广泛应用于以下领域：
- 便携式电子设备: 其低功耗特性和高效率使其非常适合移动设备和便携式电子产品。
- 开关电源: 可用于开关电源电路，以实现高效的电能转换和管理。
- 信号开关: 由于其良好的栅源阈值电压，能够有效控制小信号开关的导通与关断。
- 电机驱动: 尤其适合在小型电机控制中，以实现高效的驱动和控制。
- LED驱动: 适用于LED照明电路中的高效开关与控制。
4. 性能优势
BSS123,215凭借其优良的电气特性，如低导通电阻、宽工作温度范围和高电压承受能力，为设计工程师提供了强大的设计灵活性。器件的低功耗特性在延长电池寿命和减少热管理需求方面具有显著优势，特别是对于能源受限的应用场景。此外，TO-236AB封装的设计使得组装更为简便，能够有效节省PCB空间，提高设计的紧凑性。
5. 结论
BSS123,215 N沟道MOSFET是一款卓越的电子元件，适合广泛的应用领域。其高效能和可靠性使其在当前市场上具有竞争力。无论是在信号调理、功率开关还是在复杂电子系统中的控制应用，该器件均表现出色，是设计工程师实现高性能电路设计的理想选择。通过对这个器件的合理应用，可以更有效地解决现代电子设计中的典型挑战。
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