WMSIC Electronic Components

Nexperia PDTD123ET,215 PDTD123ET

ModelPDTD123ET,215
PackageSOT-23
BrandNexperia
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Nexperia PDTD123ET, 215
Type
SOT-23
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NEXPERIA
Electronic Component
PDTD123ET,215
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.024g
Electronic Component
1
Electronic Component
BM0265255217
Resistor
1
Resistor
2.2kΩ
Transistor Type
NPN
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PDTD123ET,215 产品概述

一、产品简介

PDTD123ET,215 是一款由知名半导体制造商 Nexperia(安世)推出的高性能 NPN 预偏置晶体管。该器件设计用于满足现代电子电路的高效能和高稳定性需求,其重要的电气参数使其在广泛的应用中表现出色。无论是在低功耗开关、放大器还是无线通信设备中,PDTD123ET,215都能提供可靠的性能支持。

二、主要规格

  • 三极管配置:NPN-预偏压
  • 集电极电流(Ic)最大值:500 mA
  • 集射极击穿电压(Vceo)最大值:50 V
  • 功率耗散:250 mW
  • 增益(hFE):最小值为40,工作条件为热气流状态下的50mA,5V
  • 基极电阻(R1):2.2 kΩ
  • 发射极电阻(R2):2.2 kΩ
  • 集电极截止电流:最大值为500 nA
  • 饱和压降(Vce):最大值300 mV,测试条件为2.5 mA及50 mA
  • 封装/外壳:TO-236-3、SC-59、SOT-23-3

三、封装与安装类型

PDTD123ET,215 产品采用表面贴装型 (SMD) 封装,具体型号为 TO-236AB。这种封装形式不仅可以在较小的空间内实现高度集成,还支持自动化贴装,极大地提高了生产效率。到达市场时,客户可享受到更好的物料成本效益和便捷的焊接性。

四、应用领域

PDTD123ET,215 的设计使其非常适用于各种应用场景,主要包括:

  • 开关电路:基于其高电流承载能力,该晶体管可用于高效控制大电流负载。
  • 信号放大器:在音频和RF(射频)应用中特别理想,其稳定性和高增益特性使得信号得以有效放大。
  • 数字电路:适合用于逻辑电路和运算电路,满足高速运转和稳定性要求。
  • 电流控制电路:在需要精确电流控制的电路中,此器件展现出其高性能的优越性。

五、技术优势

  1. 高集电极电流:最高可达500 mA,理想用于需要处理较高功率的应用场景。
  2. 高增益特性:hFE达40,使得其在小信号处理中提供了可靠的增益,确保信号放大的有效性。
  3. 良好的热稳定性:最大功耗250 mW的设计能确保设备在较高温环境下平稳运行,避免过热导致的失效。
  4. 低饱和压降:300 mV(最大)饱和压降意味着在高负载时的能量损耗较小,将增强器件的整体能效。

六、应用实例

在手机、平板电脑及智能穿戴设备中,PDTD123ET,215 功能强大的特点使其成为理想的选择。在电源管理和信号处理电路中,其极佳的性能保证了设备在各种应用场合的高效和稳定运行。此外,工业自动化及消费电子产品也常用这样的晶体管来提升设备的性能。

七、结论

综上所述,PDTD123ET,215 是一款设计出色、性能可靠的 NPN 预偏置晶体管,适用于多种电子应用中,其高效的电气性能和优越的散热特性使其在现代电子设备中扮演着不可或缺的角色。对于希望在紧凑和高效的设计中获得最佳性能的工程师而言,PDTD123ET,215 是一个理想的选择。

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