WMSIC Electronic Components

Nexperia PMV40UN2R

ModelPMV40UN2R
PackageSOT-23
BrandNexperia
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Nexperia PMV40UN2R
Type
NEXPERIA
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NEXPERIA
Electronic Component
PMV40UN2R
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.024g
Electronic Component
1
Electronic Component
BM0000287176
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:PMV40UN2R N沟道MOSFET

一、基本信息 PMV40UN2R是一款由安世(Nexperia)生产的N沟道金属氧化物场效应管(MOSFET),其设计旨在满足多种功率电子应用的需求。具备高效能和可靠性的同时,该产品适用于低功率的开关和放大电路,提供了理想的电流控制解决方案。

二、器件特性

  1. 电气规格

    • 漏源电压(Vdss): 最大30V,适用于低压环境下的开关操作。
    • 连续漏极电流(Id): 达到3.7A(在25°C环境下),适合中小功率的负载控制。
    • 漏源导通电阻(Rds(on)): 44mΩ(在3.7A和4.5V条件下),这一低导通电阻极大地减少了功耗和热量生成,提升了效率,是设计高效率电源管理电路的重要参数。
    • 最大功率耗散: 490mW(在25°C下),适合作为主要的开关元件,还能够有效防止因过热导致的故障。
  2. 栅极电压特性

    • 栅源极阈值电压(Vgs(th)): 900mV @ 250μA,适合低电平驱动系统,能够在较低电压水平下开启。
    • 驱动电压: 可在1.8V至4.5V之间操作,在这种范围内,器件保持良好的导通特性。
  3. 电容特性

    • 输入电容(Ciss): 635pF @ 15V,表明该元件在高频应用中的适应性和稳定性。
  4. 温度范围和封装信息

    • 工作温度: 承受范围为-55°C至150°C,适用于各种极端环境条件下的应用。
    • 封装类型: TO-236AB,SOT-23-3封装。这种小型表面贴装型设计适合高密度的电路板布局,有利于协调现代电子设计的轻量化要求。

三、应用场景

PMV40UN2R的设计十分灵活,适合广泛的应用场景,包括但不限于:

  • DC-DC转换器: 用于稳压模块和电池管理系统中,通过其低导通电阻有效提高转换效率。
  • 负载开关: 在各种家电、移动设备和便携式设备中作为功率开关,控制设备的电源开启与关闭。
  • 电机驱动: 适合用于小型直流电机的速度控制,能够实现精确的电流调节。
  • LED驱动: 以良好的开关特性,控制LED灯泡的驱动电流,实现更好的亮度调节。

四、技术优势

PMV40UN2R的优势在于其综合性能,额外的低导通电阻和宽广的工作温度范围使其既经济又高效。此外,其小巧的封装设计无疑为现代电子产品设计提供了更大的灵活性,使其在多种条件下都能有效工作。

五、总结

PMV40UN2R N沟道MOSFET是一款兼具性能与可靠性的电子元器件,广泛应用于各类电子设备中。其高效能特征、稳健的温度操作范围及市场领先的封装方式,使其成为设计工程师们理想的选择。无论是低功率开关应用还是高频电源转换,PMV40UN2R都展现出其卓越的电气性能和设计适应性。

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